Complementary UWB LNA Design Using Asymmetrical Inductive Source Degeneration

Abstract

This letter proposes a novel LNA design method where the complementary transistor topology is combined with asymmetrical inductive source degeneration to achieve matched input impedance over a wide bandwidth. A 2-10 GHz LNA is designed and fabricated using a commercial 0.18 mu m RF-CMOS process to verify the feasibility of our proposed method. In the intended bandwidth, this LNA has matched input impedance, 20 dB power gain, and 2.4-3.4 dB noise figure, with 25.65 mW power consumption.