Power scale-up of the diode-pumped actively Q-switched Nd : YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter
| dc.citation.epage | 50 | en_US |
| dc.citation.issue | 1 | en_US |
| dc.citation.spage | 47 | en_US |
| dc.citation.volume | 88 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Su, K. W. | en_US |
| dc.contributor.author | Chang, Y. T. | en_US |
| dc.contributor.author | Chen, Y. F. | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:13:51Z | |
| dc.date.available | 2014-12-08T15:13:51Z | |
| dc.date.issued | 2007-06-01 | en_US |
| dc.description.abstract | With an undoped YVO4 crystal as a Raman shifter, we substantially improved the reliability and the output performance of an actively Q-switched 1176-nm Nd:YVO4 Raman laser. With an incident pump power of 18.7 W, the average power is greater than 2.6 W at 80 kHz. The pulse width of the pulse envelope is shorter then 5 ns with mode-locked modulation. With an incident pump power of 12.7 W, the pulse energy and peak power is higher than 43 mu J and 14 kW at 40 kHz. | en_US |
| dc.identifier.doi | 10.1007/s00340-007-2648-0 | en_US |
| dc.identifier.issn | 0946-2171 | en_US |
| dc.identifier.journal | APPLIED PHYSICS B-LASERS AND OPTICS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1007/s00340-007-2648-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/10703 | |
| dc.identifier.wosnumber | WOS:000247306900008 | |
| dc.language.iso | en_US | en_US |
| dc.title | Power scale-up of the diode-pumped actively Q-switched Nd : YVO4 Raman laser with an undoped YVO4 crystal as a Raman shifter | en_US |
| dc.type | Article | en_US |