Characteristics of deep levels in As-implanted GaN films
| dc.citation.epage | 1814 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 1812 | en_US |
| dc.citation.volume | 81 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Lee, L | en_US |
| dc.contributor.author | Lee, WC | en_US |
| dc.contributor.author | Chung, HM | en_US |
| dc.contributor.author | Lee, MC | en_US |
| dc.contributor.author | Chen, WH | en_US |
| dc.contributor.author | Chen, WK | en_US |
| dc.contributor.author | Lee, HY | en_US |
| dc.contributor.department | 電子物理學系 | zh_TW |
| dc.contributor.department | Department of Electrophysics | en_US |
| dc.date.accessioned | 2014-12-08T15:41:57Z | |
| dc.date.available | 2014-12-08T15:41:57Z | |
| dc.date.issued | 2002-09-02 | en_US |
| dc.description.abstract | Hall, current-voltage and deep level transient spectroscopy measurements were used to characterize the electric properties of n-type GaN films implanted with As atoms. After 800 degreesC thermal annealing for 60 min, one additional deep level located at E-C-0.766 eV was found in the films. We presume this induced trap is an arsenic-related point defect, most likely antisite in nature. (C) 2002 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1499739 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1499739 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/28526 | |
| dc.identifier.wosnumber | WOS:000177676200021 | |
| dc.language.iso | en_US | en_US |
| dc.title | Characteristics of deep levels in As-implanted GaN films | en_US |
| dc.type | Article | en_US |