InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
| dc.citation.epage | en_US | |
| dc.citation.issue | 3 | en_US |
| dc.citation.volume | 6 | en_US |
| dc.citation.woscount | 5 | |
| dc.contributor.author | Chang, Edward-Yi | en_US |
| dc.contributor.author | Kuo, Chien-I | en_US |
| dc.contributor.author | Hsu, Heng-Tung | en_US |
| dc.contributor.author | Chiang, Che-Yang | en_US |
| dc.contributor.author | Miyamoto, Yasuyuki | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:29:52Z | |
| dc.date.available | 2014-12-08T15:29:52Z | |
| dc.date.issued | 2013-03-01 | en_US |
| dc.description.abstract | 60 nm InAs high-electron-mobility transistors (HEMTs) with a thin channel, a thin InAlAs barrier layer, and a very high gate stem structure have been fabricated and characterized. The thickness of the channel, as well as that of the InAlAs barrier layer, was reduced to 5 nm. A stem height of 250 nm with a Pt-buried gate was used in the device configuration to reduce the parasitics. A high DC transconductance of 2114 mS/mm and a current-gain cutoff frequency (f(T)) of 710 GHz were achieved at V-DS 0.5V. (C) 2013 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 10.7567/APEX.6.034001 | en_US |
| dc.identifier.issn | 1882-0778 | en_US |
| dc.identifier.journal | APPLIED PHYSICS EXPRESS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.7567/APEX.6.034001 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21413 | |
| dc.identifier.wosnumber | WOS:000315938100019 | |
| dc.language.iso | en_US | en_US |
| dc.title | InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications | en_US |
| dc.type | Article | en_US |