Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films
| dc.citation.epage | 1213 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1211 | en_US |
| dc.citation.volume | 85 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Jayadevan, KP | en_US |
| dc.contributor.author | Liu, CY | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:38:41Z | |
| dc.date.available | 2014-12-08T15:38:41Z | |
| dc.date.issued | 2004-08-16 | en_US |
| dc.description.abstract | Nanocrystalline Ag-Ba0.5Sr0.5TiO3 (Ag-BST) composite thin films are deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. The voltage-dependent capacitance (C-V) and dielectric loss of the films decrease with increasing Ag up to 2 mol % due to a series configuration involving low dielectric interface layers and dense microstructures. The evidence for asymmetric distribution of charge carriers in the Ag-BST film is derived from C-V measurements. The dielectric tunability of BST film with 1 mol % Ag is comparable to that of pure BST. (C) 2004 American Institute of Physics. | en_US |
| dc.identifier.doi | 10.1063/1.1780596 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.1780596 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/26469 | |
| dc.identifier.wosnumber | WOS:000223233800040 | |
| dc.language.iso | en_US | en_US |
| dc.title | Dielectric characteristics of nanocrystalline Ag-Ba0.5Sr0.5TiO3 composite thin films | en_US |
| dc.type | Article | en_US |