THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER
| dc.citation.epage | 1159 | en_US |
| dc.citation.issue | 13 | en_US |
| dc.citation.spage | 1157 | en_US |
| dc.citation.volume | 29 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | CHAO, TS | en_US |
| dc.contributor.author | LEE, CL | en_US |
| dc.contributor.author | LEI, TF | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:04:29Z | |
| dc.date.available | 2014-12-08T15:04:29Z | |
| dc.date.issued | 1993-06-24 | en_US |
| dc.description.abstract | An ellipsometry measurement method is proposed to measure the poly-Si/poly-oxide/poly-Si/SiO2/Si structure. The thickness of each layer in this structure can be easily obtained by a conventional ellipsometry measurement. The measured result is consistent with that of cross-sectional TEM. | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/2977 | |
| dc.identifier.wosnumber | WOS:A1993LW31600007 | |
| dc.language.iso | en_US | en_US |
| dc.subject | MEASUREMENT | en_US |
| dc.subject | THIN FILMS | en_US |
| dc.subject | ELLIPSOMETRY | en_US |
| dc.title | THICKNESS DETERMINATION OF POLY-SI/POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE BY ELLIPSOMETER | en_US |
| dc.type | Article | en_US |