11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique
| dc.citation.epage | 2645 | en_US |
| dc.citation.issue | 10 | en_US |
| dc.citation.spage | 2642 | en_US |
| dc.citation.volume | 50 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Wei, Hung-Ju | en_US |
| dc.contributor.author | Meng, Chinchun | en_US |
| dc.contributor.author | Chang, YuWen | en_US |
| dc.contributor.author | Huang, Guo-Wei | en_US |
| dc.contributor.department | 電信工程研究所 | zh_TW |
| dc.contributor.department | Institute of Communications Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:10:49Z | |
| dc.date.available | 2014-12-08T15:10:49Z | |
| dc.date.issued | 2008-10-01 | en_US |
| dc.description.abstract | An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc. | en_US |
| dc.identifier.doi | 10.1002/mop.23740 | en_US |
| dc.identifier.issn | 0895-2477 | en_US |
| dc.identifier.journal | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1002/mop.23740 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8284 | |
| dc.identifier.wosnumber | WOS:000258612900048 | |
| dc.language.iso | en_US | en_US |
| dc.subject | frequency divider | en_US |
| dc.subject | GaInP/GaAS HBT | en_US |
| dc.subject | emitter coupled logic | en_US |
| dc.subject | static | en_US |
| dc.subject | HLO-FF | en_US |
| dc.title | 11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique | en_US |
| dc.type | Article | en_US |