製作低溫450℃複晶矽薄膜電晶體之關鍵技術---主動層(Active Layer)及源/汲接面(Junction)之研製

dc.contributor.author	鄭晃忠	en_US
dc.contributor.author	CHENG HUANG-CHUNG	en_US
dc.contributor.department	交通大學電子工程研究所	zh_TW
dc.date.accessioned	2014-12-13T10:37:06Z
dc.date.available	2014-12-13T10:37:06Z
dc.date.issued	1999	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.identifier.govdoc	NSC88-2215-E009-057	zh_TW
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=428954&docId=76772	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/94386
dc.language.iso	zh_TW	en_US
dc.subject	複晶矽薄膜電晶體	zh_TW
dc.subject	主動層	zh_TW
dc.subject	低溫	zh_TW
dc.subject	準分子雷射	zh_TW
dc.subject	摻雜	zh_TW
dc.subject	退火	zh_TW
dc.subject	Polysilicon TFT	en_US
dc.subject	Active layer	en_US
dc.subject	Low-temperature	en_US
dc.subject	Excimer laser	en_US
dc.subject	Doping	en_US
dc.subject	Annealing	en_US
dc.title	製作低溫450℃複晶矽薄膜電晶體之關鍵技術---主動層(Active Layer)及源/汲接面(Junction)之研製	zh_TW
dc.title	Key Technologies of Low-Temperature(<450.degree.C) Poly-Si Thin Film Transistors---Research and Fabrication of Active Layers and Source/Drain Junctions	en_US
dc.type	Plan	en_US

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