Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
| dc.citation.epage | en_US | |
| dc.citation.issue | 5 | en_US |
| dc.citation.volume | 101 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Fan, Yang-Shun | en_US |
| dc.contributor.author | Liu, Po-Tsun | en_US |
| dc.contributor.author | Teng, Li-Feng | en_US |
| dc.contributor.author | Hsu, Ching-Hui | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | 顯示科技研究所 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.contributor.department | Institute of Display | en_US |
| dc.date.accessioned | 2014-12-08T15:24:05Z | |
| dc.date.available | 2014-12-08T15:24:05Z | |
| dc.date.issued | 1970-01-01 | en_US |
| dc.description.abstract | "Resistive random access memory using Al-doped zinc tin oxide (AZTO) as resistive switching layer was prepared by radio-frequency magnetron sputtering at room temperature. The Ti/AZTO/Pt device exhibits reversible and robust bi-stable resistance switching behavior over hundreds of switching cycles within 2 V sweep voltage. The Ti/AZTO/Pt device showed stable retention characteristics for over 104 s under read disturb stress condition. Besides, the electrical conduction mechanism was dominated by ohmic conduction in low resistance state, while the current transport behavior followed a trap-controlled space-charge-limited conduction process in high resistance state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4742737]" | en_US |
| dc.identifier.doi | 52901 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/52901 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16745 | |
| dc.identifier.wosnumber | WOS:000307676600054 | |
| dc.language.iso | en_US | en_US |
| dc.title | Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications | en_US |
| dc.type | Article | en_US |