High photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectrics

dc.citation.epageH225en_US
dc.citation.issue8en_US
dc.citation.spageH222en_US
dc.citation.volume11en_US
dc.citation.woscount8
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorYen, Kuo-Hsien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.date.accessioned2014-12-08T15:12:52Z
dc.date.available2014-12-08T15:12:52Z
dc.date.issued2008en_US
dc.description.abstractA simple UV-treatment process for poly(methyl methacrylate) (PMMA) dielectric is proposed to enhance photoresponsivity of pentacene-based organic thin-film transistors. The UV treatment creates excess negatively charged sites on the PMMA dielectric, which makes the device exhibit a large photoinduced current and prolongs persistent conductance recovery. In order to describe time-dependent photoinduced current, double-time constant equations are proposed. Based on time-constant fittings, slow-varied responses are found to be influenced by the UV treatment. The rapid-varied response is independent of gate bias and UV treatment. A plausible model for spatial carrier distribution is discussed and proposed to describe this observed phenomenon.en_US
dc.identifier.doi10.1149/1.2936224en_US
dc.identifier.issn1099-0062en_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.2936224en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/9927
dc.identifier.wosnumberWOS:000256706100023
dc.language.isoen_USen_US
dc.titleHigh photoresponsivity of pentacene-based organic thin-film transistors with UV-treated PMMA dielectricsen_US
dc.typeArticleen_US

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