Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement
| dc.citation.epage | en_US | |
| dc.citation.issue | 15 | en_US |
| dc.citation.volume | 98 | en_US |
| dc.citation.woscount | 27 | |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Chen, Wei-Tsung | en_US |
| dc.contributor.author | Yeh, Chung-Cheng | en_US |
| dc.contributor.author | Hsueh, Hsiu-Wen | en_US |
| dc.contributor.author | Tsai, Chuang-Chuang | en_US |
| dc.contributor.author | Meng, Hsin-Fei | en_US |
| dc.contributor.department | 物理研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Institute of Physics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:45Z | |
| dc.date.available | 2014-12-08T15:11:45Z | |
| dc.date.issued | 2011-04-11 | en_US |
| dc.description.abstract | In this study, we propose a floating dual gate (FDG) indium-gallium-zinc-oxide (IGZO) thin film transistor (TFT) with a floating metal back gate that is directly contact with IGZO without a dielectric layer. The floating back gate effect is investigated by changing the work function (phi) of the back gate. The FDG IGZO TFT exhibits an improved field-effect mobility (mu), unchanged subthreshold swing (SS), high on/off current ratio, and a tunable threshold voltage ranged (V(th)) from -5.0 to + 7.9 V without an additional back gate power supply. (C) 2011 American Institute of Physics. [doi:10.1063/1.3578403] | en_US |
| dc.identifier.doi | 10.1063/1.3578403 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3578403 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/9007 | |
| dc.identifier.wosnumber | WOS:000289580800072 | |
| dc.language.iso | en_US | en_US |
| dc.title | Dual gate indium-gallium-zinc-oxide thin film transistor with an unisolated floating metal gate for threshold voltage modulation and mobility enhancement | en_US |
| dc.type | Article | en_US |