Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
| dc.citation.epage | 513 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 511 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 12 | |
| dc.contributor.author | Chang, Kuan-Chang | en_US |
| dc.contributor.author | Tsai, Tsung-Ming | en_US |
| dc.contributor.author | Chang, Ting-Chang | en_US |
| dc.contributor.author | Wu, Hsing-Hua | en_US |
| dc.contributor.author | Chen, Kai-Huang | en_US |
| dc.contributor.author | Chen, Jung-Hui | en_US |
| dc.contributor.author | Young, Tai-Fa | en_US |
| dc.contributor.author | Chu, Tian-Jian | en_US |
| dc.contributor.author | Chen, Jian-Yu | en_US |
| dc.contributor.author | Pan, Chih-Hung | en_US |
| dc.contributor.author | Su, Yu-Ting | en_US |
| dc.contributor.author | Syu, Yong-En | en_US |
| dc.contributor.author | Tung, Cheng-Wei | en_US |
| dc.contributor.author | Chang, Geng-Wei | en_US |
| dc.contributor.author | Chen, Min-Chen | en_US |
| dc.contributor.author | Huang, Hui-Chun | en_US |
| dc.contributor.author | Tai, Ya-Hsiang | en_US |
| dc.contributor.author | Gan, Der-Shin | en_US |
| dc.contributor.author | Wu, Jia-Jie | en_US |
| dc.contributor.author | Hu, Ying | en_US |
| dc.contributor.author | Sze, Simon M. | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:30:22Z | |
| dc.date.available | 2014-12-08T15:30:22Z | |
| dc.date.issued | 2013-04-01 | en_US |
| dc.description.abstract | To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2248075 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2248075 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21715 | |
| dc.identifier.wosnumber | WOS:000316813100012 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Nonvolatile memory | en_US |
| dc.subject | resistive switching | en_US |
| dc.subject | silicon oxide | en_US |
| dc.subject | zinc | en_US |
| dc.title | Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices | en_US |
| dc.type | Article | en_US |