Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO(3)-SrRuO(3) capacitors
| dc.citation.epage | en_US | |
| dc.citation.issue | 23 | en_US |
| dc.citation.spage | en_US | |
| dc.citation.volume | 94 | en_US |
| dc.contributor.author | Pintilie, L. | en_US |
| dc.contributor.author | Dragoi, C. | en_US |
| dc.contributor.author | Chu, Y. H. | en_US |
| dc.contributor.author | Martin, L. W. | en_US |
| dc.contributor.author | Ramesh, R. | en_US |
| dc.contributor.author | Alexe, M. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:09:20Z | |
| dc.date.available | 2014-12-08T15:09:20Z | |
| dc.date.issued | 2009-06-08 | en_US |
| dc.description.abstract | The leakage current in epitaxial BiFeO(3) capacitors with bottom SrRuO(3) and top Pt electrodes, grown by pulsed laser deposition on SrTiO(3) (100), SrTiO(3) (110), and SrTiO(3) (111) substrates, is investigated by current-voltage (I-V) measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the (100), (110), and (111) orientations, respectively. | en_US |
| dc.identifier.doi | 10.1063/1.3152784 | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1063/1.3152784 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/7122 | |
| dc.language.iso | en_US | en_US |
| dc.title | Orientation-dependent potential barriers in case of epitaxial Pt-BiFeO(3)-SrRuO(3) capacitors | en_US |
| dc.type | Article | en_US |
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