Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers
| dc.citation.epage | 1713 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 1708 | en_US |
| dc.citation.volume | 55 | en_US |
| dc.citation.woscount | 8 | |
| dc.contributor.author | Lin, S. H. | en_US |
| dc.contributor.author | Yang, H. J. | en_US |
| dc.contributor.author | Chen, W. B. | en_US |
| dc.contributor.author | Yeh, F. S. | en_US |
| dc.contributor.author | McAlister, Sean P. | en_US |
| dc.contributor.author | Chin, Albert | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:11:13Z | |
| dc.date.available | 2014-12-08T15:11:13Z | |
| dc.date.issued | 2008-07-01 | en_US |
| dc.description.abstract | We have studied the performance of double-quantum-barrier [TaN - Ir(3)Si] - [HfAlO - LaAlO(3)] - Hf(0.3)N(0.2)O(0.5) - [HfAlO - SiO(2)]-Si charge-trapping memory devices. These devices display good characteristics in terms of their +/- 9-V program/erase (P/E) voltage, 100-mu s P/E speed, initial 3.2-V memory window, and ten-year extrapolated data retention window of 2.4 V at 150 degrees C. The retention decay rate is significantly better than single-barrier MONOS devices, as is the cycled retention data, due to the reduced-interface trap generation. | en_US |
| dc.identifier.doi | 10.1109/TED.2008.924435 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2008.924435 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/8610 | |
| dc.identifier.wosnumber | WOS:000257330100016 | |
| dc.language.iso | en_US | en_US |
| dc.subject | erase | en_US |
| dc.subject | high-kappa | en_US |
| dc.subject | nonvolatile memory | en_US |
| dc.subject | program | en_US |
| dc.title | Improving the retention and endurance characteristics of charge-trapping memory by using double quantum barriers | en_US |
| dc.type | Article | en_US |