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Semiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculation

dc.citation.epageen_US
dc.citation.issue5en_US
dc.citation.volume88en_US
dc.citation.woscount13
dc.contributor.authorLu, MPen_US
dc.contributor.authorHsiao, CYen_US
dc.contributor.authorLo, PYen_US
dc.contributor.authorWei, JHen_US
dc.contributor.authorYang, YSen_US
dc.contributor.authorChen, MJen_US
dc.contributor.department生物科技學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.date.accessioned2014-12-08T15:17:32Z
dc.date.available2014-12-08T15:17:32Z
dc.date.issued2006-01-30en_US
dc.description.abstractWe fabricate and measure a single-walled carbon nanotube transistor having a liquid-gate electrode. The ratio value of I-on/I-off is as high as 10(4), indicating the presence of a semiconducting channel. A passivation layer over the source/drain electrode greatly suppresses the liquid-gate leakage by about three orders of magnitude. The channel currents are noticeably distinct between two liquid samples: distilled water and aqueous solution (1x10(-4) M NaCl). This biological sensing ability is attributed to the different electrical double-layer capacitances with respect to the bulk part of the channel. The corresponding theoretical calculation is carried out in detail. (c) 2006 American Institute of Physics.en_US
dc.identifier.doi10.1063/1.2172014en_US
dc.identifier.issn0003-6951en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2172014en_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/12708
dc.identifier.wosnumberWOS:000235136700080
dc.language.isoen_USen_US
dc.titleSemiconducting single-walled carbon nanotubes exposed to distilled water and aqueous solution: Electrical measurement and theoretical calculationen_US
dc.typeArticleen_US

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