Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
| dc.citation.epage | en_US | |
| dc.citation.issue | 4 | en_US |
| dc.citation.volume | 51 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Chen, Cheng-Chang | en_US |
| dc.contributor.author | Chiu, Ching-Hsueh | en_US |
| dc.contributor.author | Tu, Po-Min | en_US |
| dc.contributor.author | Kuo, Ming-Yen | en_US |
| dc.contributor.author | Shih, M. H. | en_US |
| dc.contributor.author | Huang, Ji-Kai | en_US |
| dc.contributor.author | Kuo, Hao-Chung | en_US |
| dc.contributor.author | Zan, Hsiao-Wen | en_US |
| dc.contributor.author | Chang, Chun-Yen | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:23:18Z | |
| dc.date.available | 2014-12-08T15:23:18Z | |
| dc.date.issued | 2012-04-01 | en_US |
| dc.description.abstract | In this study, large-area GaN-based photonic quasicrystal (PQC) nanopillars were fabricated on an n-GaN substrate using the nanoimprint lithography (NIL) technique. Under optical pumping condition, a high lasing action from the GaN photonic quasicrystals was observed. The lasing wavelength is at 366nm with a low threshold power density of 0.009 kW/cm(2). To confirm the band-edge lasing mode, the finite-element method (FEM) was used to perform the simulation for the 12-fold symmetry photonic quasicrystal lattices. (C) 2012 The Japan Society of Applied Physics | en_US |
| dc.identifier.doi | 04DG02 | en_US |
| dc.identifier.issn | 0021-4922 | en_US |
| dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
| dc.identifier.uri | http://dx.doi.org/04DG02 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/16352 | |
| dc.identifier.wosnumber | WOS:000303928600057 | |
| dc.language.iso | en_US | en_US |
| dc.title | Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser | en_US |
| dc.type | Article | en_US |