Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides
| dc.citation.epage | 736 | en_US |
| dc.citation.issue | 5 | en_US |
| dc.citation.spage | 734 | en_US |
| dc.citation.volume | 75 | en_US |
| dc.citation.woscount | 3 | |
| dc.contributor.author | Zous, NK | en_US |
| dc.contributor.author | Wang, TH | en_US |
| dc.contributor.author | Yeh, CC | en_US |
| dc.contributor.author | Tsai, CW | en_US |
| dc.contributor.author | Huang, CM | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:46:18Z | |
| dc.date.available | 2014-12-08T15:46:18Z | |
| dc.date.issued | 1999-08-02 | en_US |
| dc.description.abstract | The role of positive oxide charge in excess low-level leakage current in tunnel oxides induced by Fowler/Nordheim stress is investigated. A correlation between stress-induced gate current and substrate current in an n-channel metal-oxide-semiconductor field-effect transistor is observed. Both the gate current and the substrate current exhibit a significant transient effect. The mechanisms of the stress-induced currents and their field dependence are explored. Positive oxide charge tunnel detrapping is found to be the cause of the observed transient behavior in the two currents. The stress-created positive oxide charge can be significantly annealed by substrate hot electron injection. (C) 1999 American Institute of Physics. [S0003-6951(99)02226-3]. | en_US |
| dc.identifier.issn | 0003-6951 | en_US |
| dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/31158 | |
| dc.identifier.wosnumber | WOS:000081644100047 | |
| dc.language.iso | en_US | en_US |
| dc.title | Transient effects of positive oxide charge on stress-induced leakage current in tunnel oxides | en_US |
| dc.type | Article | en_US |