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Flexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)

dc.citation.epageCP33en_US
dc.citation.issue45en_US
dc.citation.spageCP33en_US
dc.citation.volume22en_US
dc.citation.woscount0
dc.contributor.authorSung, Chao-Fengen_US
dc.contributor.authorKekuda, Dhananjayen_US
dc.contributor.authorChu, Li Fenen_US
dc.contributor.authorLee, Yuh-Zhengen_US
dc.contributor.authorChen, Fang-Chungen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.contributor.authorChu, Chih-Weien_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.date.accessioned2014-12-08T15:47:40Z
dc.date.available2014-12-08T15:47:40Z
dc.date.issued2010-12-01en_US
dc.identifier.issn0935-9648en_US
dc.identifier.journalADVANCED MATERIALSen_US
dc.identifier.urihttps://ir.lib.nycu.edu.tw/handle/11536/31889
dc.identifier.wosnumberWOS:000285396400004
dc.language.isoen_USen_US
dc.titleFlexible Fullerene Field-Effect Transistors Fabricated Through Solution Processing (vol 21, pg 4845, 2009)en_US
dc.typeCorrectionen_US

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