GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
| dc.citation.epage | 760 | en_US |
| dc.citation.issue | 9 | en_US |
| dc.citation.spage | 755 | en_US |
| dc.citation.volume | 32 | en_US |
| dc.citation.woscount | 4 | |
| dc.contributor.author | YARN, KF | en_US |
| dc.contributor.author | WANG, YH | en_US |
| dc.contributor.author | CHANG, CY | en_US |
| dc.contributor.department | 電控工程研究所 | zh_TW |
| dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:05:46Z | |
| dc.date.available | 2014-12-08T15:05:46Z | |
| dc.date.issued | 1989-09-01 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.journal | SOLID-STATE ELECTRONICS | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/4299 | |
| dc.identifier.wosnumber | WOS:A1989AL37300008 | |
| dc.language.iso | en_US | en_US |
| dc.title | GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR | en_US |
| dc.type | Article | en_US |
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