Field emission properties of two-layer structured SiCN films
| dc.citation.epage | 157 | en_US |
| dc.citation.issue | 2-3 | en_US |
| dc.citation.spage | 152 | en_US |
| dc.citation.volume | 137 | en_US |
| dc.citation.woscount | 19 | |
| dc.contributor.author | Tarntair, FG | en_US |
| dc.contributor.author | Wu, JJ | en_US |
| dc.contributor.author | Chen, KH | en_US |
| dc.contributor.author | Wen, CY | en_US |
| dc.contributor.author | Chen, LC | en_US |
| dc.contributor.author | Cheng, HC | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:44:03Z | |
| dc.date.available | 2014-12-08T15:44:03Z | |
| dc.date.issued | 2001-03-15 | en_US |
| dc.description.abstract | The electron emission characteristics of two-layer structured silicon carbon nitride (SiCN) films, which were composed of amorphous and nanocrystalline phases, were studied. Rutherford backscattering spectroscopy (RBS) was used to determine the composition of the SiCN film. The ratio (Si;C)/N of the SiCN film was kept at approximately 0.75, which is identical to that of Si3N4 him. High resolution X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy were used to investigate the bonding structures of the SiCN films. In comparison with silicon nitride films, the turn-on Voltage (for an emission current of 0.01 mA/cm(2)) of the SiCN films was rower and the emission current densities of the SiCN significantly enhanced. The promising emission properties of the SiCN film could be due to the unique two-layer structure wherein nanocrystalline SiCN was grown on top of the amorphous interlayer with sp(2) CN bond in the SiCN film. (C) 2001 Elsevier Science B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/S0257-8972(00)01072-0 | en_US |
| dc.identifier.issn | 0257-8972 | en_US |
| dc.identifier.journal | SURFACE & COATINGS TECHNOLOGY | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/S0257-8972(00)01072-0 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29769 | |
| dc.identifier.wosnumber | WOS:000167084000006 | |
| dc.language.iso | en_US | en_US |
| dc.subject | electron emission | en_US |
| dc.subject | SiCN | en_US |
| dc.subject | nanocrystalline | en_US |
| dc.subject | two-layer structure | en_US |
| dc.title | Field emission properties of two-layer structured SiCN films | en_US |
| dc.type | Article | en_US |