A Tight Binding Method Study of Optimized Si-SiO2 System
| dc.citation.epage | 3091 | en_US |
| dc.citation.spage | 3084 | en_US |
| dc.citation.volume | 57 | en_US |
| dc.citation.woscount | 4 | en_US |
| dc.contributor.author | Watanabe, Hiroshi | en_US |
| dc.contributor.author | Kawabata, Kenji | en_US |
| dc.contributor.author | Ichikawa, Takashi | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | 電子與資訊研究中心 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.contributor.department | Microelectronics and Information Systems Research Center | en_US |
| dc.date.accessioned | 2019-04-02T06:00:28Z | |
| dc.date.available | 2019-04-02T06:00:28Z | |
| dc.date.issued | 2010-11-01 | en_US |
| dc.description.abstract | A mixed method of molecular dynamics and tight binding is applied to a Si-cluster surrounded by SiO2 in order to study an influence of interfacial states on the band structure of the Si cluster. As a result, it is found that intrinsic interfacial states invade the band gaps of Si and SiO2 from the conduction band, which may suggest that the Si dot surrounded by SiO2 sounds metallic due to the interfacial states. This feature occurs while the size of the Si dot is less than at least 4 nm. | en_US |
| dc.identifier.doi | 10.1109/TED.2010.2071150 | en_US |
| dc.identifier.issn | 0018-9383 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/TED.2010.2071150 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/150110 | |
| dc.identifier.wosnumber | WOS:000283446600038 | en_US |
| dc.language.iso | en_US | en_US |
| dc.subject | Band gap | en_US |
| dc.subject | density-of-states ( DOS) | en_US |
| dc.subject | interfacial states | en_US |
| dc.subject | molecular dynamics | en_US |
| dc.subject | Si dot | en_US |
| dc.subject | SiO2 | en_US |
| dc.subject | tight binding | en_US |
| dc.title | A Tight Binding Method Study of Optimized Si-SiO2 System | en_US |
| dc.type | Article | en_US |
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