Domain growth dynamics in single-domain-like BiFeO(3) thin films

dc.citation.epage		en_US
dc.citation.issue	12	en_US
dc.citation.spage		en_US
dc.citation.volume	94	en_US
dc.contributor.author	Chen, Y. C.	en_US
dc.contributor.author	Lin, Q. R.	en_US
dc.contributor.author	Chu, Y. H.	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.date.accessioned	2014-12-08T15:09:45Z
dc.date.available	2014-12-08T15:09:45Z
dc.date.issued	2009-03-23	en_US
dc.description.abstract	We present a quantitative study of 180 degrees domain wall motion in epitaxial BiFeO(3) (111) films, which can be treated as a nearly ideal single-domain environment. The domains were dynamically written by applying voltage pulses and examined by the piezoresponse force microscope technique. A transition of domain growth behaviors from the activated type to the nonactivated type was observed when increasing the pulse voltages. The obtained activation field was close to the ideally thermodynamic switching field of BiFeO(3). The asymmetry of activated fields showed the preference of the downward polarization in the BiFeO(3)/SrRuO(3) films.	en_US
dc.identifier.doi	10.1063/1.3109779	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.3109779	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/7467
dc.language.iso	en_US	en_US
dc.title	Domain growth dynamics in single-domain-like BiFeO(3) thin films	en_US
dc.type	Article	en_US

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