Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point
| dc.citation.epage | 483 | en_US |
| dc.citation.issue | 4 | en_US |
| dc.citation.spage | 481 | en_US |
| dc.citation.volume | 34 | en_US |
| dc.citation.woscount | 1 | |
| dc.contributor.author | Chang, Tien-Shun | en_US |
| dc.contributor.author | Lu, Tsung Yi | en_US |
| dc.contributor.author | Chao, Tien-Sheng | en_US |
| dc.contributor.department | 交大名義發表 | zh_TW |
| dc.contributor.department | National Chiao Tung University | en_US |
| dc.date.accessioned | 2014-12-08T15:30:21Z | |
| dc.date.available | 2014-12-08T15:30:21Z | |
| dc.date.issued | 2013-04-01 | en_US |
| dc.description.abstract | The impacts of zero-temperature-coefficient (ZTC) points of various strained devices is presented in this letter. The current and mobility are reduced at high temperature by phonon scattering. The degree of mobility reduction becomes severe on devices with multiple strain-gate engineering. The reduction of mobility becomes severe as a result of impurity scattering, which results from gate implantation impurities. The ZTC point is decreased by multiple strain-gate engineering due to the decreased Vth. | en_US |
| dc.identifier.doi | 10.1109/LED.2013.2247736 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2013.2247736 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/21711 | |
| dc.identifier.wosnumber | WOS:000316813100002 | |
| dc.language.iso | en_US | en_US |
| dc.subject | Mobility | en_US |
| dc.subject | nMOSFETs | en_US |
| dc.subject | strain | en_US |
| dc.subject | temperature | en_US |
| dc.subject | zero-temperature-coefficient (ZTC) point | en_US |
| dc.title | Impacts of Multiple Strain-Gate Engineering on a Zero-Temperature-Coefficient Point | en_US |
| dc.type | Article | en_US |