Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films
| dc.citation.epage | 1647 | en_US |
| dc.citation.issue | 6 | en_US |
| dc.citation.spage | 1640 | en_US |
| dc.citation.volume | 48 | en_US |
| dc.citation.woscount | 28 | |
| dc.contributor.author | Lue, HT | en_US |
| dc.contributor.author | Tseng, TY | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:43:15Z | |
| dc.date.available | 2014-12-08T15:43:15Z | |
| dc.date.issued | 2001-11-01 | en_US |
| dc.description.abstract | A series of Al/Ba0.5Sr0.5TiO3 (BST)/sapphire multi-layered coplanar waveguide (CPW) transmission lines of different geometries and thin-film configurations was fabricated. We employed an accurate on-wafer Through-Line-Reflect (TRL) calibration technique and quasi-TEM analysis to measure the dielectric constant, loss tangent, and tunability of BST thin films using this CPW structure. Experimental results show that the overall insertion loss is less than 3 dB/cm even at frequencies as high as 20 GHz, which is the lowest obtained to date for metal/BST CPW devices. This result indicates that, with optimized impedance matching, normal conductors are also possibly suitable for fabricating low-loss tunable phase-shifter devices. | en_US |
| dc.identifier.doi | 10.1109/58.971716 | en_US |
| dc.identifier.issn | 0885-3010 | en_US |
| dc.identifier.journal | IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/58.971716 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/29270 | |
| dc.identifier.wosnumber | WOS:000172684300018 | |
| dc.language.iso | en_US | en_US |
| dc.title | Application of on-wafer TRL calibration on the measurement of microwave properties of Ba0.5Sr0.5TiO3 thin films | en_US |
| dc.type | Article | en_US |