Browsing by Author "CHEN KUAN-NENG"
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Item type:Item, BONDING METHOD FOR THREE-DIMENSIONAL INTEGRATED CIRCUIT AND THREE-DIMENSIONAL INTEGRATED CIRCUIT THEREOF(2013-03-21) ;CHEN KUAN-NENGHsu Sheng-YaoThe present invention discloses a bonding method for a three-dimensional integrated circuit and the three-dimensional integrated circuit thereof. The bonding method comprises the steps of: providing a substrate; depositing a film layer on the substrate; providing a light source to light onto the film layer to form a graphic structure; forming a metal co-deposition layer by a first metal and a second metal that are co-deposited on the film layer; providing a first integrated circuit having the substrate, the film layer and the metal co-deposition layer sequentially; providing a second integrated circuit that having the metal co-deposition layer, the film layer and the substrate sequentially; and the first integrated circuit is bonded with the second integrated circuit at a predetermined temperature to form a three-dimensional integrated circuit.Item type:Item, HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME(2012-12-13) ;CHEN KUAN-NENG ;KO CHENG-TALO WEI-CHUNGA heterostructure contains an IC and an LED. An IC and an LED are initially provided. The IC has at least one first electric-conduction block and at least one first connection block. The IC electrically connects with the first electric-conduction block. The first face of the LED has at least one second electric-conduction block and at least one second connection block. The LED electrically connects to the second electric-conduction block. Subsequently, the first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block. The first electric-conduction block is electrically connected with the second electric-conduction block and forms a heterostructure. The system simultaneously provides functions of heat radiation and electric communication for the IC and LED resulting in a high-density, multifunctional heterostructure.Item type:Item, HETEROSTRUCTURE CONTAINING IC AND LED AND METHOD FOR FABRICATING THE SAME(2014-01-02) ;CHEN KUAN-NENG ;KO CHENG-TALO WEI-CHUNGA heterostructure containing IC and LED and a method of fabricating. An IC and an LED are established with the IC having a first electric-conduction block and a first connection block. The IC electrically connects to the first electric-conduction block. A first face of the LED has a second electric-conduction block and a second connection block. The LED is electrically connected to the second electric-conduction block. The first electric-conduction block and the first connection block are respectively joined to the second electric-conduction block and the second connection block, and the first electric-conduction block are electrically connected with the second electric-conduction block to form a heterostructure. The heterostructure provides functions of heat radiation and electric communication for IC and LED.Item type:Item, 三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( II )(2011) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析( III )(2012) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 三維積體電路(3D IC)之矽晶直通孔(TSV)與其它關鍵技術製程整合研究及應力量測熱傳導模型分析(I)(2010) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所本計畫的目的為使用奈米碳管與鎳奈米線材料之矽晶直通孔(TSV)示範三維積體電路測試結構並且建立熱傳導模型、應力分析。本計畫的核心在於將所有相關3D IC製程整合,並至成為一可操作測試的元件結構。首先,矽晶直通孔之製程參數建立包括其準直式蝕刻、蝕刻速率與角度間變異、高深寬比低粗糙度蝕刻等對於後續填孔洞是必須的。再來,設計測試架構平台提供後續製程包括奈米碳管、鎳奈米線之填充,熱模擬分析及應力測試。此測試平台的設計為面對面晶圓銅接合、上層晶圓磨薄、矽晶直通孔(TSV) 蝕刻並且能在實驗室環境下量測。最後,測試結構的電性分析、利用穿透式電子顯微鏡探討側邊架構的填充的品質分析。此外,熱傳在三維積體電路架構下,其熱堆積問題必然會更加嚴重,必須建立其熱傳導模型才可分析不同圖型、材料下矽直通孔去改善熱堆積在三維積體電路的議題。同時,在此之應力分析探討於銅-銅、奈米碳管-催化金屬及接面金屬、鎳-銅接面在不同矽直通孔密度與維度下之變異。建立最佳製程參數流程後,由相關子計畫負責提供符合可在三維積體電路之薄膜電晶體,經過電路布局設計,互相整合成朝向具高散熱性、高穩定性高品質之三維電路應用於未來顯示科技。Item type:Item, 三維積體電路(3D IC)之記憶體元件堆疊設計、模擬、製程與電性量測研究(I)(2013) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 三維積體電路(3D IC)關鍵技術之研究(2009) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 三維積體電路(3D IC)關鍵技術之研究(2010) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 發展超低溫銅接合與3DIC技術以實現40奈米與0.18微米異質整合平台及先進小尺寸石英震盪元件之研究(2016) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 發展超低溫銅接合與3DIC技術以實現40奈米與0.18微米異質整合平台及先進小尺寸石英震盪元件之研究(2015) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 發展超低溫銅接合與3DIC技術以實現40奈米與0.18微米異質整合平台及先進小尺寸石英震盪元件之研究(2014) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 超高通道與解析度微大腦皮質訊號擷取系統晶片封裝的研發---子計畫二:使用TSV與3D IC技術製作超高通道與解析度微大腦皮質訊號擷取系統晶片(2016) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 超高通道與解析度微大腦皮質訊號擷取系統晶片封裝的研發---子計畫二:使用TSV與3D IC技術製作超高通道與解析度微大腦皮質訊號擷取系統晶片(2015) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所Item type:Item, 超高通道與解析度微大腦皮質訊號擷取系統晶片封裝的研發---子計畫二:使用TSV與3D IC技術製作超高通道與解析度微大腦皮質訊號擷取系統晶片(2014) ;陳冠能 ;CHEN KUAN-NENG國立交通大學電子工程學系及電子研究所