Browsing by Author "CHIU, HT"

Now showing 1 - 20 of 21

A NOVEL SYNTHESIS OF ORGANOIMIDO COMPLEX BY TRANSAMINATION REACTION - X-RAY CRYSTAL-STRUCTURE OF BIS-(ISOPROPYLIMIDO) COMPLEX OF TUNGSTEN(VI), [W(MU-NPRI)(NPRI)(NHPRI)2]2
(1994-08-01)
CHIU, HT
;
CHUANG, SH
;
LEE, GH
;
PENG, SM
;
應用化學系
The bis(isopropylimido) complex [W(mu-NPri)(NPri) (NHPri)(2)](2) was synthesized by reacting W-2(NBu(i))(2)(NHBu(i))(2) with excess (PrNH2)-N-i. The complex, characterized by X-ray crystallography, is a dimer of distorted trigonal bipyramids sharing an edge defined by the unsymmetrical bridging imido ligands. Exchange between the bridging and the terminal imido ligands were observed on the NMR timescale, Delta G double dagger = 14.5+/-1.0 kcal mol(-1). An equilibration process is proposed to account for the fluxional behaviour.
DEPOSITION OF MOLYBDENUM CARBONITRIDE THIN-FILMS FROM MO(NBUT)2(NHBUT)2
(1994-07-01)
CHIU, HT
;
HO, WY
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Mo(NBut)2(NHBut)2 is used as a single-source precursor to deposit thin films of cubic phase molybdenum carbonitride, MoC(x)N(y), (x: 0.2-0.55, y: 0.1-0.47), by chemical vapor deposition on silicon substrates. in general, the C/Mo ratios increased from 0.2 to 0.55 and the N/Mo ratios decreased from 0.47 to 0.1 with increasing the temperature of deposition from 773 to 923 K. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon atoms were incorporated through beta-methyl activation of the ligands.
DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM 1,1-DIMETHYL-1-SILACYCLOBUTANE
(1992-08-01)
CHIU, HT
;
LEE, SF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline beta-SiC thin films were grown at temperatures 1100 and 1200-degrees-C. At temperatures between 950 and 1100-degrees-C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).
DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANE
(1991-11-15)
CHIU, HT
;
LEE, SF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
DEPOSITION OF TANTALUM NITRIDE THIN-FILMS FROM ETHYLIMIDOTANTALUM COMPLEX
(1992-01-15)
CHIU, HT
;
CHANG, WP
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
DEPOSITION OF THIN-FILMS FROM (TBUN)2MO(NHTBU)2
(1993-08-22)
CHIU, HT
;
HO, WY
;
應用化學系
;
Department of Applied Chemistry
DIFLUOROSILYLENE AS A PRECURSOR FOR THE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
(1992-09-01)
CHEN, CC
;
YU, JL
;
LEE, CY
;
LIU, CS
;
CHIU, HT
A new method for preparing thin films of titanium silicide, TiSi2, by chemical vapour deposition of difluorosilylene and titanium tetrachloride is reported.
EFFECT OF HYDROGEN ON DEPOSITION OF TANTALUM NITRIDE THIN-FILMS FROM ETHYLIMIDOTANTALUM COMPLEX
(1992-05-01)
CHIU, HT
;
CHANG, WP
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
ETHYLIMIDOTANTALUM COMPLEX AS PRECURSOR TO TANTALUM NITRIDE THIN-FILMS
(1991-08-25)
CHIU, HT
;
CHANG, WP
;
應用化學系
;
Department of Applied Chemistry
GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
(1995-09-01)
CHIU, HT
;
SHIE, SC
;
CHUANG, SH
;
交大名義發表
;
應用化學系
Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.
GROWTH OF TERNARY SI1-X-YGEXCY THIN-FILMS FROM A SINGLE-SOURCE PRECURSOR, GE(SIME(3))(4)
(1995-09-01)
CHIU, HT
;
SHIE, SC
;
CHUANG, SH
;
應用化學系
;
Department of Applied Chemistry
Ge(SiMe(3))(4) was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (a = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm(-1). X-ray photoelectron spectra of a typical thin film showed binding energies of Ge-3d, Si-2p, and C-1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, x was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of beta-SiC with Ge atoms replacing some Si atoms in the lattice.
HYDROGEN PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM DODECAMETHYLCYCLOHEXASILANE
(1993-04-15)
CHIU, HT
;
HUANG, SC
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES
(1991-06-01)
CHIU, HT
;
WU, PF
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.
LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TIN AND ZRN THIN-FILMS FROM TI(NET2)4 AND ZR(NET2)4
(1990-08-26)
CHIU, HT
;
HUANG, CC
;
應用化學系
;
Department of Applied Chemistry
LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM AND ZIRCONIUM CARBONITRIDE THIN-FILMS FROM M(NET2)4 (M = TI AND ZR)
(1993-04-01)
CHIU, HT
;
HUANG, CC
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Ti (NEt2)4 and Zr (NEt2)4 were used as single-source precursors to deposit titanium and zirconium carbonitride thin films on Si( 100) and glass substrates at temperatures 673-923 K by low-pressure chemical vapor deposition. The thin films were analyzed by X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, wavelength dispersive spectroscopy, and infrared spectroscopy. The films deposited at high temperatures crystallized into cubic structures as shown by X-ray diffraction. The nitrogen-to-metal ratios were close to unity in most cases while the carbon-to-metal ratios decreased with increasing deposition temperature. At deposition temperatures below 773 K, hydrocarbon stretchings were observed by IR, Attempts to decrease carbon levels in thin films by adding H-2 into the carrier gas showed opposite effects.
LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM HEXAMETHYLDISILANE
(1994-11-15)
CHIU, HT
;
HSU, JS
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
Silicon carbide thin films were grown by low pressure chemical vapor deposition using hexamethyldisilane Me3SiSiMe3 as the single-source precursor. Deposition of uniform thin films on Si(1 1 1) substrates was carried out at temperatures 1123-1323 K in a hot-wall reactor. The growth rates were 0.9-55 nm min-1 depending on the conditions employed. Estimated energy of activation is 110 kJ mol-1. Bulk elemental composition of the thin films, studied by an electron probe X-ray microanalyzer, is best described as SiC(x) (x = 0.8-2.3). The Si/C ratio increased with increasing temperature of deposition. The films were cubic polycrystals, a = 0.435-0.438 nm, as indicated by scanning transmission electron microscopy, electron diffraction and X-ray diffraction. The lattice parameter decreased with increasing temperature of deposition. Elemental distribution within the films, studied by Auger depth profiling and X-ray photoelectron spectroscopy, was uniform. Gas phase products H-2, CH4, C2H4, Me3SiH and Me4Si were identified and possible reaction pathways were proposed.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
(1995-08-21)
TSAI, MH
;
SUN, SC
;
CHIU, HT
;
TSAI, CE
;
CHUANG, SH
We deposited tantalum nitride (TaN) frlrns by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) using a new precursor tertbutylimidotris(diethylamido)tantalum (TBTDET). Strong Ta-N double bond in the precursor preserved the ''TaN'' portion during the pyrolysis process. This method has yielded low-resistivity films. It changed from 10 m Omega cm (deposited at 500 degrees C) to 920 mu Omega cm (obtained at 650 degrees C). The carbon and oxygen concentrations were low in the films deposited at 600 degrees C, as determined by x-ray photoelectron spectroscopy. Transmission electron microscopy and x-ray diffraction analysis indicated that the as-deposited films exhibited polycrystalline structures with the lattice constants close to the bulk TaN value. The TaN barrier layer was successfully applied as a glue layer for CVD tungsten (W) metallization schemes. (C) 1995 American Institute of Physics.
SYNTHESES AND X-RAY CRYSTAL-STRUCTURES OF DICHLOROBIS(TERT-BUTYLIMIDO) COMPLEXES OF MOLYBDENUM(VI) - POTENTIAL PRECURSORS TO MOLYBDENUM NITRIDE AND MOLYBDENUM CARBONITRIDE
(1994-12-01)
CHIU, HT
;
CHANG, GB
;
HO, WY
;
CHUANG, SH
;
LEE, GH
The bistertbutylimido complexes [MoCl(mu L-Cl)(NBu(t))(2)(NH(2)Bu(t))](2), 1, and MoCl2(NBu(t))(2)(py)(2), 2 (py = pyridine), were prepared by reacting MoCl2(NBu(t))(2)(dme) (dme = dimethoxyethane) with excess Bu(t)NH(2) and pyridine, respectively. Their structures were determined by X-ray crystallography. 1 has a pseudo edge-shared bioctahedral geometry with two Cl ligands bridging the Mo centers unequally. Pertinent bond distances and angles for 1, Mo = NBu(bent)(t) = 1.737(3) Angstrom, angle Mo = N-CMe(3) = 154.0(2)degrees; Mo = NBu(linear)(t) = 1.725(3) Angstrom, angle Mo = N-CMe(3) = 172.4(2)degrees; Mo-Bu(t)NH(2) = 2.233(2) Angstrom; Mo=Cl-bridging = 2.575(1) and 2.835(1) Angstrom, and Mo-Cl-leminal = 2.428(1) Angstrom. Crystal data for 1: triclinic, space group P (1) over bar, a = 8.897(4) Angstrom, b = 10.518(3) Angstrom, c = 10.663(3) Angstrom, alpha = 107.68(2)degrees, beta = 98.03(3)Angstrom, gamma = 99.26(3)degrees, V = 919.3(5) Angstrom(3), Z = II D-c = 1.381 g/mL. 2 is mononuclear with a distorted octahedral geometry with two trans Cl ligands, two cis-oriented Bu(t)N = ligands, and two py ligands trans to the imido groups. Pertinent averaged bond distances and angles for 2, Mo = NBu(bent)(t) = 1.736(4) Angstrom, angle Mo = N-CMe, = 161.8(4)degrees; Mo = NBu(linear)(t) = 1.705(5) Angstrom, angle Mo = N-CMe(3) = 173.4(4)degrees; Mo-N(py)= 2.44(1), Mo-Cl = 2.421(3) Angstrom Crystal data for 2: orthorhombic, space group Pna2(1) a = 16.860(2) Angstrom, b = 8.920(3) Angstrom, c = 15.120(3) Angstrom, V = 2274.1(9) Angstrom(3), Z = 4, D-c = 1.362 g/mL. A potential application of 2 as a single-source precursor to grow molybdenum nitride and molybdenum carbonitride thin films by low pressure chemical vapor deposition (LPCVD) was explored. Cubic phase thin films (a(thin film) = 4.16 - 4.20 Angstrom) were grown at temperatures between 450 degrees C and 650 degrees C with hydrogen as carrier gas. At 450 degrees C, thin films of molybdenum nitride were obtained. With temperature of deposition increased from 450 degrees C to 650 degrees C, the ratio C/Mo increased from 0.03 to 0.5 whereas the ratio C/Mo decreased from 0.7 to 0.3. Thus, thin films of molybdenum carbonitride were deposited at 650 degrees C.
SYNTHESIS AND CHARACTERIZATION OF N=CR(OTBU)3
(1995-04-02)
CHIU, HT
;
CHEN, YP
;
LEE, GH
;
PENG, SM
;
應用化學系