Browsing by Author "Chen, King-Sheng"

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Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETs
(2007)
Tsai, Tzu-, I
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Lee, Yao-Jen
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Chen, King-Sheng
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Wang, Jeff
;
Hsueh, Fu-Kuo
Impacts of a buffer layer and hi-wafers on the performance of strained-channel NMOSFETs with SiN capping layer
(2007)
Tsai, Tzu-, I
;
Lee, Yao-Jen
;
Chen, King-Sheng
;
Wang, Jeff
;
Wan, Chia-Chen
Impacts of a buffer layer and hydrogen-annealed wafers on the performance of strained-channel nMOSFETs with SiN-capping layer
(2008-10-01)
Tsai, Tzu-I
;
Lin, Horng-Chih
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Lee, Yao-Jen
;
Chen, King-Sheng
;
Wang, Jeff
In this study, the effects of Si3N4 layer capping and TEOS buffer layer inserted prior to the Si3N4 deposition on the NMOS device characteristics as well as correlated hot-electron degradations were investigated. The devices were built on two kinds of the substrates, namely, Cz and hydrogen-annealed (Hi) wafers. More importantly, we found that hydrogen species is the primary culprit for aggravated reliabilities in strained devices. By exerting the accelerated stress test, we could study the hot-electron degradation thoroughly in terms of threshold voltage shift (Delta V-TH), transconductance degradation (Delta Gm) and so on. The TEOS buffer layer could effectively block the diffusion of hydrogen species from the Si3N4 capping layer into the channel and the Si/SiO2 interface during the Si3N4 deposition as well as subsequent thermal cycles. (C) 2008 Elsevier Ltd. All rights reserved.
Reliability of strained-channel NMOSFETs with SiN capping layer on Hi-wafers with a thin LPCVD-TEOS buffer layer
(2007)
Tsai, Tzu-, I
;
Lee, Yao-Jen
;
Chen, King-Sheng
;
Wang, Jeff
;
Wan, Chia-Chen
Trapping and de-trapping characteristics in PBTI and dynamic PBTI between HfO2 and HfSiON gate dielectrics
(2008)
Lin, We-Liang
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Lee, Yao-Jen
;
Lo, Wen-Cheng
;
Chen, King-Sheng
;
Hou, Y. T.
PBTI degradation for HfO2 and HfSiON NMOSFETs has been demonstrated. The generated oxide trap dominated the PBTI characteristics for Hf-based gate dielectrics. In addition, the reduction of Delta V-TH and oxide trap generation under PBTI indicates that the HfSiON is better than HfO2. On the other hand, the electron trapping/de-trapping effect has been investigated. As compared to HfO2 dielectrics, the HfSiON has shallower charge trapping level due to elimination of deep dielectric vacancies, and the temperature effects are quite different between the HfSiON and HfO2 gate dielectrics.