Browsing by Author "Chi, CC"

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AC power loss and signal coupling in very large scale integration backend interconnects
(2006-04-01)
Chen, CC
;
Kao, HL
;
Liao, CC
;
Chin, A
;
McAlister, SP
Both the coupling and AC power losses in integrated circuit interconnects in the radio-frequency regime have been measured. The AC power loss decreases with decreasing length, decreasing spacing, and increasing inter metal dielectric (IMD) thickness of parallel metal lines. The unwanted signal coupling and cross-talk monotonically decrease with increasing spacing and decreasing length of the parallel metal lines. However, increasing the IMD thickness from 0.7 to 6 mu m improves the low frequency performance but not the maximum operation frequency. Using a high-resistivity Si (HRS) substrate the AC power loss is significantly reduced but is traded off with an increase in coupling loss. The most effective method of reducing both the AC power and coupling losses is the combined use of three dimensional (3D) integration and an HRS, which gives larger than 1-2 orders of magnitude improvement, up to 20 GHz.
Electrical-stress effects and device modeling of 0.18-mu m RF MOSFETs
(2006-04-01)
Kao, HL
;
Chin, A
;
Liao, CC
;
Chen, CC
;
McAlister, SP
in this paper, a novel microstrip-line layout is used to make accurate measurements of the minimum noise figure (NFmin) of RF MOSFETs. A low NFmin of 1.05 dB at 10 GHz was directly measured for 16-finger 0.18-mu m MOSFETs, without de-embedding. Using an analytical expression for NFmin, we have developed a self-consistent dc current-voltage, S-parameter, and NF in model, where the simulated results match the measured device characteristics well, both before and after electrical stress.
Fabrication of very high resistivity Si with low loss and cross talk
(2000-09-01)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have used proton and As+ implantation to increase the resistivity of conventional Si (10 Omega-cm) and Si-on-quartz substrates, respectively. High resistivity of 1.6 M Omega-cm is measured that is close to intrinsic Si and semi-insulating GaAs, Very low loss and cross coupling of 6.3 dB/cm and -79 dB/cm (10 mu m gap) at 20 GHz are measured on these samples, respectively. The very high resistivity and improved rf performance are due to the extremely fast similar to 1 ps carrier lifetime stable even after a 400 degrees C annealing for 1 h, Little negative effect on gate oxide integrity is also observed as evidenced by the comparable stress-induced leakage current and charge-to-breakdown for 30 Angstrom oxides.
High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
(2005-07-01)
Chiang, KC
;
Huang, CC
;
Chin, A
;
Chen, WJ
;
McAlister, SP
We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.
Low noise and high gain RF MOSFETs on plastic substrates
(2005)
Kao, HL
;
Chin, A
;
Huang, CC
;
Hung, BF
;
Chiang, KC
A low minimum noise figure (NFmin) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 mu m RF MOSFETs on plastic, made by substrate thinning (similar to 30 mu m), transfer and bonding. The performance can be further improved to 0.96 dB NFmin and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.
Low noise RF MOSFETs on flexible plastic substrates
(2005-07-01)
Kao, HL
;
Chin, A
;
Hung, BF
;
Lee, CF
;
Lai, JM
We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
(2005)
Chin, A
;
Laio, CC
;
Chen, C
;
Chiang, KC
;
Yu, DS
To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO(3) barrier (kappa=23), and smaller erase current by large Delta E(c) of AILaO(3)/TaN, the SiO(2)/AlGaN/AlLaO(3)/TaN devices show good 85 degrees C memory integrity of low +/- 10V 1ms P/E, large 3.9V initial Delta V(th) and 2.4V extrapolated 10-year retention. A fast 100ps P/E of +/- 11V still gives 3.0V initial Delta V(th) and 1.6V 10-year retention.
Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention
(2005)
Lai, CH
;
Chin, A
;
Chiang, KC
;
Yoo, WJ
;
Cheng, CF
Using the strong trapping capability of novel AlN (kappa=10), low voltage drop in high-kappa layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(K=17)/IrO2 device shows good 85 degrees C memory integrity of fast 100 is erase, large 3.7V Delta V-th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V Delta V-th and 3.4V for 85 degrees C 10-year retention at 1 ms erase.
One-polymer active pixel
(2004-01-26)
Tzeng, KL
;
Meng, HF
;
Tzeng, MF
;
Chen, YS
;
Liu, CH
A metal-oxide field-effect transistor (MOSFET) based on an electroluminescent conjugated polymer is fabricated on a glass substrate. It is found that the mobility horizontal to the substrate is two to three orders of magnitude larger than the mobility vertical to the substrate. The high horizontal mobility is attributed to the in-plane chain alignment in amorphous spin-coated films. We demonstrate an active pixel in which the light-emitting diode and the driving MOSFET share the same active polymer. (C) 2004 American Institute of Physics.
Physics and modeling of Ge-on-Insulator MOSFETs
(2005)
Chin, A
;
Kao, HL
;
Tseng, YY
;
Yu, DS
;
Chen, CC
We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m) and smaller Ge energy bandgap - however this also causes a larger off-state I(ds) leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.
Rf loss and cross talk on extremely high resistivity (10K-1M Omega-cm) Si fabricated by ion implantation
(2000)
Wu, YH
;
Chin, A
;
Shih, KH
;
Wu, CC
;
Liao, CP
We have achieved 1.6M Omega -cm resistivity using ion implantation that has little negative effect on MOS devices. Extremely low loss and cross coupling of 6.3 and -79 dB/cm (10 mum gap) at 20GHz are measured with 1 mum Al, respectively, which is due to implant induced trap with similar to 1ps carrier lifetime and stable to 400 degreesC.
Synthesis of 2,5-disubstituted thienosultines and their thermal reactions with dienophiles and nucleophiles
(2002-12-27)
Liu, WD
;
Chi, CC
;
Pai, IF
;
Wu, AT
;
Chung, WS
The 2,5-disubstituted thienosultines (5,7-disubstituted 1,4-dihydro-1H-3lambda(4)-thieno[3,4-d][2,3]oxathiin-3-oxides) 5a-d were prepared from the corresponding dichlorides 4a-d with the commercially available Rongalite (sodium formaldehyde sulfoxylate) in 17-60% yields. When heated in the presence of electron-poor dienophiles, sultines 5a-d underwent elimination of SO2, and the resulting non-Kekule biradicals 7a-d were intercepted as the 1:1 adducts 8-12 in good to excellent yields. The pyrolysis of sultines and sulfolenes with different concentrations of dienophiles revealed that either a preequilibrium between starting reagents and biradical species or Diels-Alder and retroDiels-Alder reaction mechanisms may be involved; however, more work is necessary to establish the proposed mechanisms. Reaction of sultine 5b with nBuLi was found to undergo a nucleophilic ring-opening reaction to give sulfinyl alcohol 17 after H2O workup. When sultine 5a was heated in benzene in a sealed tube in the presence of methanol, methanol-d4, or 2-mercaptoethanol, the respective 1:1 trapping adducts 19-21 as well as the rearranged sulfolene 6a were isolated in similar amounts. The isolation of adducts 19-21 may be explained by the involvement of either biradical or ionic intermediates during the pyrolysis.
Thermal and microwave assisted reactions of 2,5-disubstituted thienosultines with [60]fullerene: non-Kekule biradicals and self-sensitized oxygenation of the cycloadduct
(2004-11-22)
Chi, CC
;
Pai, IF
;
Chung, WS
;
應用化學系
;
Department of Applied Chemistry
Refluxing an o-dichlorobenzene solution of 2,5-disubstituted thienosultines 10a-f with [60]fullerene for 2-24 h gave both 1:1 and 2:1 cycloadducts in 37-79% isolated yields. The reaction was highly accelerated by microwave irradiation giving comparable yields of cycloadducts. Sultines 10a-f underwent cheletropic extrusion of SO2 to form the corresponding non-Kekule biradical intermediates 11a-f, which were subsequently trapped by [60]fullerene to form corresponding cycloadducts. The activation energy barriers (DeltaG(c)(not equal)) determined for the boat-to-boat inversion of these 4',5',6',7'-tetrahydrobenzo[c]thieno-[5',6':1,2][60]fullerene adducts 12a-f were found to be in the range of 13.5-14.8 kcal/mol. Unexpectedly, one of the monoadduct 12a was found to be labile when kept in air under ambient light. Two new products 15 (a sulfine-enone) and 16 (an endione) were isolated from the decomposed 12a and were found to derive from self-sensitized singlet oxygen reaction on the 2,5-dimethylthieno moiety of 12a. (C) 2004 Elsevier Ltd. All rights reserved.
Very high density RF MIM capacitor compatible with VLSI
(2005)
Chiang, KC
;
Lai, CH
;
Chin, A
;
Kao, HL
;
McAlister, SP
We have fabricated RF MIM capacitors, using high-kappa TiTAO as the dielectric, which show a record high density of 20 fF/mu m(2). In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pA and a high Q of 120. This was for a typical large 8 pF TiTaO MINI capacitor. The small voltage dependence of the capacitance (Delta C/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.
Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric
(2005-10-01)
Chiang, KC
;
Lai, CH
;
Chin, A
;
Wang, TJ
;
Chiu, HF
A very high density of 23 fF/mu m(2) has been measured in RF metal-insulator-metal (MIM) capacitors which use high-kappa TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MINI capacitors should be useful for precision RF circuits.
Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer
(2005-11-01)
Kao, HL
;
Hung, BF
;
Chin, A
;
Lai, JM
;
Lee, CF
A very low minimum noise figure (NFmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-mu m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (similar to 30 mu m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NFmin anda 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.