High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications

Abstract

We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.