High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
| dc.citation.epage | 506 | en_US |
| dc.citation.issue | 7 | en_US |
| dc.citation.spage | 504 | en_US |
| dc.citation.volume | 26 | en_US |
| dc.citation.woscount | 32 | |
| dc.contributor.author | Chiang, KC | en_US |
| dc.contributor.author | Huang, CC | en_US |
| dc.contributor.author | Chin, A | en_US |
| dc.contributor.author | Chen, WJ | en_US |
| dc.contributor.author | McAlister, SP | en_US |
| dc.contributor.author | Chiu, HF | en_US |
| dc.contributor.author | Chen, JR | en_US |
| dc.contributor.author | Chi, CC | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:18:50Z | |
| dc.date.available | 2014-12-08T15:18:50Z | |
| dc.date.issued | 2005-07-01 | en_US |
| dc.description.abstract | We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode. | en_US |
| dc.identifier.doi | 10.1109/LED.2005.851241 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/LED.2005.851241 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/13535 | |
| dc.identifier.wosnumber | WOS:000230150400026 | |
| dc.language.iso | en_US | en_US |
| dc.subject | TiTaO | en_US |
| dc.subject | Ir | en_US |
| dc.subject | MIM | en_US |
| dc.subject | analog | en_US |
| dc.subject | ITRS | en_US |
| dc.title | High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications | en_US |
| dc.type | Article | en_US |