標題: High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
作者: Chiang, KC
Huang, CC
Chin, A
Chen, WJ
McAlister, SP
Chiu, HF
Chen, JR
Chi, CC
奈米科技中心
Center for Nanoscience and Technology
關鍵字: TiTaO;Ir;MIM;analog;ITRS
公開日期: 1-七月-2005
摘要: We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.
URI: http://dx.doi.org/10.1109/LED.2005.851241
http://hdl.handle.net/11536/13535
ISSN: 0741-3106
DOI: 10.1109/LED.2005.851241
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 26
Issue: 7
起始頁: 504
結束頁: 506
顯示於類別:期刊論文


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