標題: | High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications |
作者: | Chiang, KC Huang, CC Chin, A Chen, WJ McAlister, SP Chiu, HF Chen, JR Chi, CC 奈米科技中心 Center for Nanoscience and Technology |
關鍵字: | TiTaO;Ir;MIM;analog;ITRS |
公開日期: | 1-七月-2005 |
摘要: | We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode. |
URI: | http://dx.doi.org/10.1109/LED.2005.851241 http://hdl.handle.net/11536/13535 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2005.851241 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 26 |
Issue: | 7 |
起始頁: | 504 |
結束頁: | 506 |
顯示於類別: | 期刊論文 |