High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications

標題:	High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
作者:	Chiang, KC Huang, CC Chin, A Chen, WJ McAlister, SP Chiu, HF Chen, JR Chi, CC 奈米科技中心 Center for Nanoscience and Technology
關鍵字:	TiTaO;Ir;MIM;analog;ITRS
公開日期:	1-七月-2005
摘要:	We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.
URI:	http://dx.doi.org/10.1109/LED.2005.851241 http://hdl.handle.net/11536/13535
ISSN:	0741-3106
DOI:	10.1109/LED.2005.851241
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	26
Issue:	7
起始頁:	504
結束頁:	506
顯示於類別：	期刊論文

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