High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications

doi:10.1109/LED.2005.851241

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chiang, KC	en_US
dc.contributor.author	Huang, CC	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Chen, WJ	en_US
dc.contributor.author	McAlister, SP	en_US
dc.contributor.author	Chiu, HF	en_US
dc.contributor.author	Chen, JR	en_US
dc.contributor.author	Chi, CC	en_US
dc.date.accessioned	2014-12-08T15:18:50Z	-
dc.date.available	2014-12-08T15:18:50Z	-
dc.date.issued	2005-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2005.851241	en_US
dc.identifier.uri	http://hdl.handle.net/11536/13535	-
dc.description.abstract	We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.	en_US
dc.language.iso	en_US	en_US
dc.subject	TiTaO	en_US
dc.subject	Ir	en_US
dc.subject	MIM	en_US
dc.subject	analog	en_US
dc.subject	ITRS	en_US
dc.title	High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2005.851241	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	26	en_US
dc.citation.issue	7	en_US
dc.citation.spage	504	en_US
dc.citation.epage	506	en_US
dc.contributor.department	奈米科技中心	zh_TW
dc.contributor.department	Center for Nanoscience and Technology	en_US
dc.identifier.wosnumber	WOS:000230150400026	-
dc.citation.woscount	32	-
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