標題: Very high kappa and high density TiTaO MIM capacitors for analog and RF applications
作者: Chiang, KC
Chin, A
Lai, CH
Chen, WJ
Cheng, CF
Hung, BF
Liao, CC
電機學院
College of Electrical and Computer Engineering
公開日期: 2005
摘要: For the first time, high density (10.3 fF/mu m(2)), low voltage linearity (alpha = 89 ppm/V-2) and small leakage current (1.2 x 10(-8) A/cm(2) or 5.8 fA/[pF circle V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-kappa TiTaO (kappa = 45) and high work-function Ir capacitor, which further improve to very high 23 fF/mu m(2) density and low 81 ppm/V-2 linearity for higher speed analog/RF ICs at 1 GHz, using the fast a decay mechanism with increasing frequency.
URI: http://hdl.handle.net/11536/17833
ISBN: 4-900784-00-1
期刊: 2005 Symposium on VLSI Technology, Digest of Technical Papers
起始頁: 62
結束頁: 63
顯示於類別:會議論文