標題: Very high density RF MIM capacitor compatible with VLSI
作者: Chiang, KC
Lai, CH
Chin, A
Kao, HL
McAlister, SP
Chi, CC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RF;capacitor;MIM;TiTaO
公開日期: 2005
摘要: We have fabricated RF MIM capacitors, using high-kappa TiTAO as the dielectric, which show a record high density of 20 fF/mu m(2). In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pA and a high Q of 120. This was for a typical large 8 pF TiTaO MINI capacitor. The small voltage dependence of the capacitance (Delta C/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.
URI: http://hdl.handle.net/11536/17807
http://dx.doi.org/10.1109/MWSYM.2005.1516582
ISBN: 0-7803-8845-3
ISSN: 0149-645X
DOI: 10.1109/MWSYM.2005.1516582
期刊: 2005 IEEE MTT-S International Microwave Symposium, Vols 1-4
起始頁: 287
結束頁: 290
顯示於類別:會議論文


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