RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density

Abstract

A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.