標題: RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance density
作者: Huang, C. C.
Chiang, K. C.
Kao, H. L.
Chin, Albert
Chen, W. J.
奈米科技中心
Center for Nanoscience and Technology
關鍵字: capacitor;International Technology Roadmap for Semiconductors (ITRS);metal-insulator-metal (MIM);radio frequency integrated circuit (RF IC);SrTiO3
公開日期: 1-九月-2006
摘要: A very high density of 35 fF/mu m(2) is measured in a radio frequency (RF) metal-insulator-metal (MIM) capacitor using high-kappa (kappa = 169) SrTiO3 fabricated by very large scale integration (VLSI) back-end integration. A very small capacitance reduction of 4.1% from 100 kHz to 10 GHz, low leakage current of 1 X 10(-7) A/cm(2) at 1 V are simultaneously measured. The small voltage dependence of a capacitance Delta C/C of 637 ppm is also obtained at 2 GHz, which ensures this MIM capacitor useful for high precision circuits operated at a RF regime.
URI: http://dx.doi.org/10.1109/LMWC.2006.880709
http://hdl.handle.net/11536/11866
ISSN: 1531-1309
DOI: 10.1109/LMWC.2006.880709
期刊: IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume: 16
Issue: 9
起始頁: 493
結束頁: 495
顯示於類別:期刊論文


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