Very high density RF MIM capacitor compatible with VLSI

Abstract

We have fabricated RF MIM capacitors, using high-kappa TiTAO as the dielectric, which show a record high density of 20 fF/mu m(2). In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pA and a high Q of 120. This was for a typical large 8 pF TiTaO MINI capacitor. The small voltage dependence of the capacitance (Delta C/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.