標題: High density RF MIM capacitors using high-kappa AlTaOx dielectrics
作者: Huang, CH
Yang, MY
Chin, A
Zhu, CX
Li, MF
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: Very high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.
URI: http://hdl.handle.net/11536/18542
ISBN: 0-7803-7695-1
ISSN: 0149-645X
期刊: 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
起始頁: 507
結束頁: 510
顯示於類別:會議論文