標題: | High density RF MIM capacitors using high-kappa AlTaOx dielectrics |
作者: | Huang, CH Yang, MY Chin, A Zhu, CX Li, MF Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2003 |
摘要: | Very high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime. |
URI: | http://hdl.handle.net/11536/18542 |
ISBN: | 0-7803-7695-1 |
ISSN: | 0149-645X |
期刊: | 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 |
起始頁: | 507 |
結束頁: | 510 |
顯示於類別: | 會議論文 |