High density RF MIM capacitors using high-kappa AlTaOx dielectrics

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Huang, CH	en_US
dc.contributor.author	Yang, MY	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Zhu, CX	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Kwong, DL	en_US
dc.date.accessioned	2014-12-08T15:26:09Z	-
dc.date.available	2014-12-08T15:26:09Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7695-1	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18542	-
dc.description.abstract	Very high capacitance density of 10 fF/mum(2) is measured using high-kappa AlTaOx, with small capacitance reduction of 5% from 10 KHz to 30 GHz, low loss tangent < 0.03, and process compatible with existing VLSI back-end integration. Small voltage dependence of capacitance < 600 ppm, mathematical derived from S-parameters, is obtained at 1 GHz, which ensures this MIM capacitor useful for high precision circuits operated at RF regime.	en_US
dc.language.iso	en_US	en_US
dc.title	High density RF MIM capacitors using high-kappa AlTaOx dielectrics	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3	en_US
dc.citation.spage	507	en_US
dc.citation.epage	510	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184045100117	-
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