Browsing by Author "Chiang, KC"

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Carrier transportation of rapid thermal annealed CeO2 gate dielectrics
(2004)
Wang, JC
;
Chiang, KC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
We investigated the carrier transportation of ultrathin CeO2 gate dielectrics with rapid thermal annealing (RTA). After annealing, the effective oxide thickness was decreased and the characteristics were significantly improved. Temperature dependence of gate leakage current was studied and Frenkel-Poole dominated the conduction mechanism for low RTA temperature. As the annealing temperature increases, Fowler-Nordheim tunneling became much more important and the CeO2/n-Si electron barrier height of 0.75 eV was extracted for future modeling and simulation. In addition, the energy band diagram of Al/CeO2/n-Si structure was established for the first time. (C) 2004 The Electrochemical Society.
Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealing
(2004)
Wang, JC
;
Chiang, KC
;
Lei, TF
;
Lee, CL
;
電子工程學系及電子研究所
In this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO2 films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of Al/CeO2/n-Si structure for the first time.
High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applications
(2005-07-01)
Chiang, KC
;
Huang, CC
;
Chin, A
;
Chen, WJ
;
McAlister, SP
We have developed novel high-k Ir/TiTaO/TaN capacitors which have high-capacitance density (10.3 fF/mu m(2)), small leakage current at 2 V (1.2 x 10(-8) A/cm(2)), and low voltage linearity of the capacitance (89 ppm/V-2). These excellent results meet the TTRS roadmap requirements for precision -analog capacitors for the year 2018. The good performance is due to the very high K (45) achieved in the TiTaO dielectric and the high work-function (5.2 eV) provided by the Ir electrode.
High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
(2005-06-01)
Hung, BF
;
Chiang, KC
;
Huang, CC
;
Chin, A
;
McAlister, SP
We have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.
Low noise and high gain RF MOSFETs on plastic substrates
(2005)
Kao, HL
;
Chin, A
;
Huang, CC
;
Hung, BF
;
Chiang, KC
A low minimum noise figure (NFmin) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 mu m RF MOSFETs on plastic, made by substrate thinning (similar to 30 mu m), transfer and bonding. The performance can be further improved to 0.96 dB NFmin and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.
Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention
(2005)
Chin, A
;
Laio, CC
;
Chen, C
;
Chiang, KC
;
Yu, DS
To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO(3) barrier (kappa=23), and smaller erase current by large Delta E(c) of AILaO(3)/TaN, the SiO(2)/AlGaN/AlLaO(3)/TaN devices show good 85 degrees C memory integrity of low +/- 10V 1ms P/E, large 3.9V initial Delta V(th) and 2.4V extrapolated 10-year retention. A fast 100ps P/E of +/- 11V still gives 3.0V initial Delta V(th) and 1.6V 10-year retention.
Modeling RF MOSFETs after electrical stress using low-noise microstrip line layout
(2005)
Kao, HL
;
Chin, A
;
Lai, JM
;
Lee, CF
;
Chiang, KC
A novel microstrip line layout is developed to direct measure the min. noise figure (NFmin) accurately instead of the complicated de-embedding procedure in conventional CPW line. Very low NFmin of 1.05 dB at 10 GHz is directly measured in 16 gate fingers 0.18 mu m MOSFETs without any de-embedding. Based on the accurate NFmin measurement, we have developed the self-consistent DC, S-parameters and NFmin model to predict device characteristics after the continuous stress with good accuracy.
Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention
(2005)
Lai, CH
;
Chin, A
;
Chiang, KC
;
Yoo, WJ
;
Cheng, CF
Using the strong trapping capability of novel AlN (kappa=10), low voltage drop in high-kappa layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(K=17)/IrO2 device shows good 85 degrees C memory integrity of fast 100 is erase, large 3.7V Delta V-th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V Delta V-th and 3.4V for 85 degrees C 10-year retention at 1 ms erase.
Very high density RF MIM capacitor compatible with VLSI
(2005)
Chiang, KC
;
Lai, CH
;
Chin, A
;
Kao, HL
;
McAlister, SP
We have fabricated RF MIM capacitors, using high-kappa TiTAO as the dielectric, which show a record high density of 20 fF/mu m(2). In addition, the capacitors display a small capacitance reduction of only 3.6% over the 100 kHz to 20 GHz range, a low leakage current of 8 pA and a high Q of 120. This was for a typical large 8 pF TiTaO MINI capacitor. The small voltage dependence of the capacitance (Delta C/C) of 770 ppm at 2 GHz, shows that these MIM capacitors are useful for high-precision RF circuits.
Very high kappa and high density TiTaO MIM capacitors for analog and RF applications
(2005)
Chiang, KC
;
Chin, A
;
Lai, CH
;
Chen, WJ
;
Cheng, CF
For the first time, high density (10.3 fF/mu m(2)), low voltage linearity (alpha = 89 ppm/V-2) and small leakage current (1.2 x 10(-8) A/cm(2) or 5.8 fA/[pF circle V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-kappa TiTaO (kappa = 45) and high work-function Ir capacitor, which further improve to very high 23 fF/mu m(2) density and low 81 ppm/V-2 linearity for higher speed analog/RF ICs at 1 GHz, using the fast a decay mechanism with increasing frequency.
Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectric
(2005-10-01)
Chiang, KC
;
Lai, CH
;
Chin, A
;
Wang, TJ
;
Chiu, HF
A very high density of 23 fF/mu m(2) has been measured in RF metal-insulator-metal (MIM) capacitors which use high-kappa TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MINI capacitors should be useful for precision RF circuits.