Browsing by Author "Lin, Yu-Hsin"

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A novel fabrication method of microlens array by surface tension and injection process
(2007)
Lin, Yu-Hsin
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Hsu, Wensyang
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機械工程學系
;
Department of Mechanical Engineering
A novel and simple method on. fabricating Ultra-Violet curable polymer microlens array on silicon membrane and cantilever by injection process is presented. The radius of curvature of microlens can be tuned by liquid polymer surface tension and applied pressure. The polymer microlens array, with a diameter of 17 mu m, a pitch of 30 mu m on silicon membrane and cantilever are successfully fabricated to demonstrate the feasibility of the proposed method. Also, it is shown that different curvature radius of microlens can be fabricated, and the proposed method has potential to integrate with other optical device.
A novel self-aligned process between a nano-aperture and a solid immersion lens for a near-field optical system
(2006-12-01)
Hsu, Hung-Lung
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Chang, Yu-Ru
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Chiu, Yi
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Lin, Yu-Hsin
;
Hsu, Wensyang
For near-field optical systems, an aperture in nano-size and a solid immersion lens (SIL) are two popular methods to overcome the diffraction limit and reduce the optical spot size. In previous research, combining a nano-aperture and SIL has been proposed to provide high throughput and ultra-high resolution. However, alignment between the nano-aperture and SIL is very critical in the fabrication process, and no effective alignment technique has been investigated yet. In this research, a novel self-alignment technique is proposed for the combination of the nano-aperture and SIL, where the nano-aperture is fabricated with the focused ion beam (FIB) system and the SIL is formed by the thermal reflowing process. The self-alignment technique is based on the backside exposure and the surface tension self-modulation technique during the thermal reflowing process. The maximum deviation of the fabricated SIL is less than 3% in comparison with the designed values. A SIL of 15 mu m diameter has been measured with 65.2% transmission efficiency. The polymer SIL combined with the circular aperture of 329 nm diameter has 1.68 times enhancement on throughput compared with the circular aperture of 329 nm alone. This result shows that the SIL can effectively enhance the throughput of the nano-aperture, and the feasibility of the proposed self-alignment method is also verified.
A Rapid Fatigue Test Method on Micro Structures for High-Cycle Fatigue
(2016-03)
Shieh, Yi-Chueh
;
Lin, Hsuan-Yu
;
Hsu, Wensyang
;
Lin, Yu-Hsin
;
機械工程學系
Here, a rapid fatigue test method for micro structure is proposed, where the test sample is excited at its resonant frequency by an external actuator. Due to the scaling effect, a micro cantilever beam has high resonant frequency, so the testing time can be greatly reduced. In addition, no complicated built-in micro actuator is needed; therefore, it is easy to fabricate the test sample. Single-crystal silicon (SCS) beams are fabricated to demonstrate the proposed method here with two types of beams. A notch is designed near the fixed end to have stress concentration effect. The input voltage of the piezoelectric patch is adjusted to excite the cantilever beams at its resonant frequency to have different amplitudes to find the corresponding fatigue life, where a laser Doppler vibrometer is used to monitor displacements of the cantilever beam to control the stress amplitude. Then, the stress-life (S/N) curve of the silicon beam can be obtained. It is found that the fatigue limit of the SCS beam is about 1.33 GPa, and it takes only about 5.2 h to test 1.35 x 10(9) cycles at a resonant frequency of 72 kHz. Comparing with previous fatigue test methods with an external probe, testing 10(9) cycles at a frequency of 20 Hz will need 1.58 years, which indicates that the proposed rapid fatigue test method is particularly suitable for high-cycle fatigue test of micro structure.
A Reversible Micro Mechanical-latch Shock Switch by External Magnetic Field
(2012)
Shieh, Yi-Chueh
;
Ma, Ruei-Pin
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Hsu, Wensyang
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Lin, Yu-Hsin
;
Tang, Yu-Hsiang
A reversible passive micro mechanical-latch shock switch made of nickel is designed, fabricated, and tested here. Unlike previous reversible mechanical-latch shock switches, which need built-in micro actuators to unlock the latch, the design proposed here utilizes external magnetic field to unlock the switch after experiencing impact over threshold level. Therefore, the switch is reusable and compact due to no built-in micro actuator.
Abnormal Dual Channel Formation Induced by Hydrogen Diffusion From SiNx Interlayer Dielectric in Top Gate a-InGaZnO Transistors
(2017-03-01)
Chen, Guan-Fu
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Chang, Ting-Chang
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Chen, Hua-Mao
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Chen, Bo-Wei
;
Chen, Hong-Chih
This letter investigates effects of different channel dimensions in top-gate a-InGaZnO4 thin-film transistors with SiNx interlayer dielectric. In narrow channel devices, hydrogen atoms in the SiNx layer diffuse into the entire active layer, inducing a single channel. However, in wider channel devices, the diffusion distance for hydrogen atoms is insufficient to affect the whole channel, instead inducing a double channel. In addition, under hot carrier stress, narrow and wide channels exhibit different degradation behaviors, with simulations showing a strong electrical field at IGZO near the drain terminal of the main channel, which is unaffected by hydrogen.
Achieving saturation in vertical organic transistors for organic light-emitting diode driving by nanorod channel geometric control
(2013-04-22)
Li, Chang-Hung
;
Stehlin, Fabrice
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Wang, Kai-Ruei
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Lin, Yu-Hsin
;
Wieder, Fernand
When conventional field-effect transistors with short channel length suffer from non-saturated output characteristics, this work proposed a vertical channel transistor to operate like a solid-state vacuum tube and exhibit good saturated curves. We utilized deep ultra-violet interference lithography to produce ordered grid-like metal to control the potential profile in vertical channel. We compared experimental and simulated characteristics to investigate the keys to achieve saturation. Finally, with an optimized design, a vertical organic transistor is used to drive a solution-processed white-light organic light-emitting diode to perform a luminescence control (0-260 cd/m(2)) with a 3.3-V base potential swing. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4802999]
Amorphous Titanium Oxide Semiconductors on Quasi-Crystal-Like InGaZnO Channels for Thin Film Transistor Applications
(2015-06)
Hsu, Hsiao-Hsuan
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Chiou, Ping
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Cheng, Chun-Hu
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Yen, Shiang-Shiou
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Tung, Chien-Hung
This paper reports an InGaZnO thin-film transistor with titanium-oxide semiconductor as channel capping layer. Based on the experimental results, the titanium-oxide semiconductor has the function of not only a surface passivation layer to reduce the defect states localized at grain boundaries near source/drain contacts, but also a mobility booster to enhance electric field across channel. Compared to control IGZO TFT, the crystalline IGZO TFTs with titanium-oxide semiconductor exhibits an improved performance of a low drive voltage of <5 V, a low threshold voltage of 1.9 V, a low sub-threshold swing of 244 mV/decade, and a high mobility of 13.7 cm(2)/V s. The simple titanium-oxide capping process have been demonstrated in this work, which provides considerable potential for further display applications requiring a low power operation and a low-temperature fabrication.
Correlation of thermal annealing effect, crystallinity and electrical characteristics in c-axis crystallized InGaZnO thin-film transistors
(2015-09-15)
Hsu, Hsiao-Hsuan
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Yen, Shiang-Shiou
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Chiu, Yu-Chien
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Chiou, Ping
;
Chang, Chun-Yen
A low off-state current of 1.6 x 10(-14) A/mu m and a small subthreshold gate swing of 152 mV/decade were achieved in a novel thin film transistor using a c-axis crystallized InGaZnO semiconductor that could be obtained at a low substrate temperature range of 150 degrees C. From experimental results, we found that the lowered off-state current is mainly attributed to the formation of rich Ga-O bonds to reduce oxygen vacancies, and the c-axis crystallized structure of IGZO to increase the potential barrier on the source side due to the increase of local trap states at the grain boundary. (C) 2015 Elsevier B.V. All rights reserved.
Lipoplex-based targeted gene therapy for the suppression of tumours with VEGFR expression by producing anti-angiogenic molecules
(2020-04-09)
Ho, Shu-Yi
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Chen, Pin-Rong
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Chen, Chia-Hung
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Tsai, Nu-Man
;
Lin, Yu-Hsin
Background The anti-angiogenic fusion protein RBDV-IgG1 Fc (RBDV), which comprises the receptor-binding domain of vascular endothelial growth factor-A (VEGF-A), has shown antitumour effects by reducing angiogenesis in vivo. This study used the cationic lipoplex lipo-PEG-PEI-complex (LPPC) to simultaneously encapsulate both the RBDV targeting protein and the RBDV plasmid (pRBDV) without covalent bonds to assess VEGFR targeting gene therapy in mice with melanoma in vivo. Results LPPC protected the therapeutic transgene from degradation by DNase, and the LPPC/RBDV complexes could specifically target VEGFR-positive B16-F10 cells both in vitro and in vivo. With or without RBDV protein-targeting direction, the pRBDV-expressing RBDV proteins were expressed and reached a maximal concentration on the 7th day in the sera after transfection in vivo and significantly elicited growth suppression against B16-F10 melanoma but not IgG1 control proteins. In particular, LPPC/pRBDV/RBDV treatment with the targeting molecules dramatically inhibited B16-F10 tumour growth in vivo to provide better therapeutic efficacy than the treatments with gene therapy with IgG1 protein targeting or administration of a protein drug with RBDV. Conclusions The simultaneous combination of the LPPC complex with pRBDV gene therapy and RBDV protein targeting might be a potential tool to conveniently administer targeted gene therapy for cancer therapy.
Novel 140 degrees C Hybrid Thin Film Solar Cell/Transistor Technology with 9.6% Conversion Efficiency and 1.1 cm2/V-s Electron Mobility for Low-Temperature Substrates
(2010)
Shen, Chang-Hong
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Shieh, Jia-Min
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Kuo, Hao-Chung
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Huang, Jung Y.
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Huang, Wen-Hsien
For the first time, we report a low temperature silicon thin film deposition technology using high density plasma for high performance and low cost solar cells with embedded transistor modules. For process temperature at 140 degrees C, energy conversion efficiency of 9.6% and electron mobility of 1.1 cm(2)/V-s have been achieved. Device performance with process temperature down to 90 degrees C and 60 degrees C has also been examined in depth. This very low process temperature technology can integrate energy harvesting with electronics on inexpensive and flexible substrates.
Polymer as the protecting passivaton layer in fabricating suspended SCS structures in both anisotropic and isotropic etching
(2012-04-01)
Lin, Yu-Hsin
;
Hsu, Wensyang
;
機械工程學系
;
Department of Mechanical Engineering
This paper presents a rapid bulk micromachining process named polymer passivation layer for suspended structures etching by using a polymer as a protecting passivation layer at both anisotropic and isotropic etching steps. Without using silicon-dioxide (SiO2) deposition or boron doping as a protection layer at the releasing step, the proposed method can fabricate suspended single-crystal silicon structures in an inductively coupled plasma reactive ion etching chamber directly, which would simplify the fabrication process and save fabrication time. The current study systematically investigates critical fabrication parameters to verify the feasibility of the proposed method, and discusses the polymer passivation time and removal time of a polymer at the base of a substrate at four different opening gaps of 5, 10, 30 and 50 mu m with the 30 mu m deep trench to establish suitable recipes for fabricating suspended microstructures. It is also shown that the proposed method can fabricate not only the suspended microstructures with the same thickness, but also suspended microstructures with different thicknesses, as well as in sub-micro scale.
Soldering of solution-processed organic vertical transistor and light-emitting diode on separate glass substrates by tin micro-balls
(2013-11-01)
Lin, Yu-Hsin
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Chang, Yu-Fan
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Meng, Hsin-Fei
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Zan, Hsiao-Wen
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Hsu, Wensyang
The vertical organic space-charge-limited transistor made of P3HT and small-molecule phosphorescent organic light-emitting diode (OLED) are made on two separate glass substrate by blade coating, then soldered vertically together by tin balls with 40 mu m diameter. The soldering is done by hot wind of 150 degrees C for 5 min Contact resistance is only 10 Omega. The vertical transistor is annealed at 150 degrees C for 5 min before soldering to enhance the output current up to 25 mA/cm(2) and give high thermal stability. Both OLED and the annealed vertical transistor are not affected by the soldering process. The vertical transistor has 1/4 of the OLED area and turns on the bottom-emission white OLED up to 300 cd/m(2) and orange OLED up to 600 cd/m(2). The entire operation is within 8 V. OLED and transistor array can therefore be made on separate glass substrates then soldered together to form the display. (C) 2013 Elsevier B. V. All rights reserved.
Structural and electrical characteristics of thin film transistor employing an oriented crystalline InGaZnO channel
(2015-04-01)
Yen, Shiang-Shiou
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Hsu, Hsiao-Hsuan
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Chiou, Ping
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Cheng, Chun-Hu
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Tung, Chien-Hung
In this study, we investigate the impact of orientated crystalline InGaZnO (IGZO) thin film transistor. To evaluate interface thermodynamic stability of temperature-sensitive IGZO film, the film-structural stabilities of high-and low-indium-content InGaZnO were studied. With increasing annealing temperature up to 700 degrees C, the crystallinity becomes more pronounced while device electrical characteristics are further improved. We find that the apparently reduced off-state current can be attributed to the formation of c-axis-orientated crystalline located at the X-ray diffraction peak of (0, 0, 16). The performance improvements include a very low turn-on voltage close to zero voltage, a small subthreshold swing of 130mV/dec, and a low off-state current of 2.4 x 10(-14)A/mu m at a low operating voltage of 4V. (C) 2015 The Japan Society of Applied Physics
The study of compensative structure assisted convex and concave corner structures etching by Inductively Coupled Plasma-Reactive Ion Etch (ICP-RIE)
(2015)
Lin, Yu-Hsin
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Cheng, Yuan-Chieh
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Chu, Nien-Nan
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Hsu, Wensyang
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Tang, Yu-Hsiang
In this paper, the compensative structure assisted the convex and concave corner structures etch in inductively coupled plasma reactive ion etch (ICP-RIE) have been studied. In anisotropic silicon etching, under the Bosch patent, sequentially alternating etch and passivation cycles can easily achieve high aspect ratio silicon structures. But, the feature size of the convex and concave corner structures are difficult to maintain as original design at the bottom position in deep etch, due to non-vertical movement plasma etch. A compensative structure can obstruct the non-vertical plasma to etch the convex corner structures and reduce the etch lag effect during the etch process leading to better profile at deep etch. The current study systematically investigates plasma condition to verify feasibility of the proposed method, and discusses effect of the gap between compensative structure and convex and concave corner structures at three different gaps of 15, 10, 5 mu m. It demonstrate the compensative structure with small gap in front of the convex and concave corner structures have better profile at deep ICP-RIE etching.
Thin Film Silicon Solar Cell Fabricated at 100 degrees C by High Density Plasma for Flexible Photovoltaic Application
(2010-01-01)
Shen, Chang-Hong
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Shieh, Jia-Min
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Kuo, Hao-Chung
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Huang, Jung Y.
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Yu, Wen-Chien
Record fabrication temperature, 100 degrees C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200 degrees C (4.1% at 135 degrees C). (C) 2009 Optical Society of America
Two Closely Related Fluconazole-Resistant Candida tropicalis Clones Circulating in Taiwan from 1999 to 2006
(2009-09-01)
Li, Shu-Ying
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Yang, Yun-Liang
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Lin, Yu-Hsin
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Ko, Hui-Ching
;
Wang, An-Huei
Recently, we reported that diploid sequence type (DST) 140 was a predominant type of Candida tropicalis among isolates with fluconazole minimum inhibitory concentrations (MICs) >= 64 mu g/ml collected in the Taiwan Surveillance of Antimicrobial Resistance of Yeasts (TSARY) in 1999. To determine if DST140 persists in Taiwan, we have used multilocus sequence typing to characterize the genetic profiles of 31 resistant isolates (MICs >= 64 mu g/ml), together with 19 susceptible isolates (MICs <= 16 mu g/ml) collected in TSARY 2006. Among the 50 isolates, 33 distinct DSTs were detected. Of the 31 resistant isolates, 11 (35.5%) belonged to two closely related DSTs (140 and 98), whereas none of the 19 susceptible isolates did (p = 0.004). The isolates belonging to DST140 and 98 were from different geographic regions instead of a restricted area. Thus, our data show temporal and spatial transmission of C. tropicalis clones with high fluconazole MICs in Taiwan from 1999 to 2006.