Browsing by Issue Date, starting with "1996-08-15"

Now showing 1 - 20 of 85166

Characterization of antenna effect by nondestructive gate current measurement
(1996-08-15)
Lin, HC
;
Chien, CH
;
Huang, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.
Differential matched filter architecture for spread spectrum communication systems
(1996-08-15)
Lin, WC
;
Liu, KC
;
Wang, CK
;
電信工程研究所
;
Institute of Communications Engineering
The authors present a new digital matched filter architecture: digital differential matched filter (DDMF), that employs novel schemes to reduce the number of multiplications and accumulations (M and A). Theoretical analysis shows that the DDMF saves half of the M and A hardware in comparison with the conventional filter, and maintains identical processing gain. This makes the proposed DDMF more suitable for direct sequence spread spectrum (DSSS) communication systems and low power VLSI implementations.
Parallel pixel processing using programmable gate arrays
(1996-08-15)
Budgett, DM
;
Tang, PE
;
Sharp, JH
;
Chatwin, CR
;
Young, RCD
A reconfigurable hardware design permits very fast feature extraction from high frame rate video images. By implementing parallel pixel processing paths in programmable gate arrays, a wide range of image processing algorithms can be implemented in realtime.
Characterization of antenna effect by nondestructive gate current measurement
(1996-08-15)
Lin, HC
;
Chien, CH
;
Huang, TY
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A novel method is proposed for the effective characterization of plasma-charge-induced damage on thin gate oxides. We have found that the gate current measured at V-g(gate voltage) = V-th(threshold voltage) under a low drain bias (e.g., 0.1 V) is a good indicator of the damage. Since the proposed method requires only low bias voltages, it does not cause additional damage to the devices. The proposed gate current measurement is also easy to incorporate to device measurement routines without an extra stressing step, and thus provides a simple and efficient damage indicator for studying plasma-charge-induced damage.
Differential matched filter architecture for spread spectrum communication systems
(1996-08-15)
Lin, WC
;
Liu, KC
;
Wang, CK
;
電信工程研究所
;
Institute of Communications Engineering
The authors present a new digital matched filter architecture: digital differential matched filter (DDMF), that employs novel schemes to reduce the number of multiplications and accumulations (M and A). Theoretical analysis shows that the DDMF saves half of the M and A hardware in comparison with the conventional filter, and maintains identical processing gain. This makes the proposed DDMF more suitable for direct sequence spread spectrum (DSSS) communication systems and low power VLSI implementations.
Electron differential inverse mean free path for surface electron spectroscopy
(1996-08-20)
Chen, YF
;
Kwei, CM
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new, general expression for the position-dependent differential inverse mean free path (DIMFP) of an electron penetrating into vacuum from a solid is derived. This DIMFP can be divided up into a bulk and a surface term. It is found that the surface effect is restricted to a surface layer extending on both sides of the vacuum-solid interface. An extended Drude dielectric function, which allows the characteristic oscillator strength, damping constant, and critical-point energy for each subband of valence electrons, is employed to estimate electron DIMFPs near Al and Au surfaces. Our results are relevant to the understanding of inelastic electron scattering near a solid surface.
Thickness dependence of magnetic force and vortex creation in type-II superconducting thin film
(1996-08-20)
Wei, JC
;
Chen, JL
;
Horng, L
;
Yang, TJ
;
電子物理學系
We examined a single vortex line in an infinite type-II superconducting thin film with finite thickness. The thickness dependence of the magnetic force acting on a point dipole placed above a superconducting film is calculated as the negative of the gradient of the interaction energy, coupled to the London theory of superconductivity with electromagnetics. We also considered the situation of a single vortex creation in the thin film, caused by the field of the magnetic dipole tip itself. The thickness dependence of the critical position of the point dipole for creating the first vortex line in the thin film is calculated.
Electron differential inverse mean free path for surface electron spectroscopy
(1996-08-20)
Chen, YF
;
Kwei, CM
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A new, general expression for the position-dependent differential inverse mean free path (DIMFP) of an electron penetrating into vacuum from a solid is derived. This DIMFP can be divided up into a bulk and a surface term. It is found that the surface effect is restricted to a surface layer extending on both sides of the vacuum-solid interface. An extended Drude dielectric function, which allows the characteristic oscillator strength, damping constant, and critical-point energy for each subband of valence electrons, is employed to estimate electron DIMFPs near Al and Au surfaces. Our results are relevant to the understanding of inelastic electron scattering near a solid surface.
Synthesis of ent-herbasolide
(1996-08-21)
Ho, TL
;
Liang, FS
;
交大名義發表
;
應用化學系
;
National Chiao Tung University
ent-Herbasolide is synthesised by elaboration of (+)-10-camphorsulfonyl chloride which involves homologation at C-10 cleavage of the C-2/C-3 bond, oxidation at C-5 and chain extension at C-3 of the camphor skeleton.
Synthesis of ent-herbasolide
(1996-08-21)
Ho, TL
;
Liang, FS
;
應用化學系
;
Department of Applied Chemistry
ent-Herbasolide is synthesised by elaboration of (+)-10-camphorsulfonyl chloride which involves homologation at C-10 cleavage of the C-2/C-3 bond, oxidation at C-5 and chain extension at C-3 of the camphor skeleton.
Effect of lateral substituent on the mesomorphic properties of ferroelectric side-chain liquid crystalline polysiloxanes.
(1996-08-25)
Hsu, CS
;
Tsai, CT
;
應用化學系
;
Department of Applied Chemistry
Effect of lateral substituent on the mesomorphic properties of ferroelectric side-chain liquid crystalline polysiloxanes.
(1996-08-25)
Hsu, CS
;
Tsai, CT
;
應用化學系
;
Department of Applied Chemistry
Thermally stimulated deporization current and DSC studies of the dual glass transitions in side-chain liquid crystalline copolysiloxanes
(1996-08-25)
Chang, HL
;
Hsu, CS
;
應用化學系
;
Department of Applied Chemistry
A new imidazoles as potent inhibitors of beta-glucosidase.
(1996-08-25)
Shu, HH
;
Li, YK
;
應用化學系
;
Department of Applied Chemistry
Thermally stimulated deporization current and DSC studies of the dual glass transitions in side-chain liquid crystalline copolysiloxanes
(1996-08-25)
Chang, HL
;
Hsu, CS
;
應用化學系
;
Department of Applied Chemistry
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
(1996-08-26)
Chang, KM
;
Wang, SW
;
Wu, CJ
;
Yeh, TH
;
Li, CH
In this letter, fluorinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor deposition system with SiH4, O-2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)(3) used in other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the deposition temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the deposition temperature. However, the higher deposition temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the deposition temperature must be above 300 degrees C. On the other hand, ECR-SiO2 (without fluorination), even deposited at room temperature, is shown to have a good water resistance. Therefore, by choosing deposition temperature for FxSiOy to have enough thermal tolerance and capping with ECR-SiO2, the moisture resistor is suggested for the inter metal dielectric applications.
Influences of deposition temperature on thermal stability and moisture resistance of chemical vapor deposited fluorinated silicon oxide by using indirect fluorinating precursor
(1996-08-26)
Chang, KM
;
Wang, SW
;
Wu, CJ
;
Yeh, TH
;
Li, CH
In this letter, fluorinated silicon oxide (FxSiOy) films were deposited in the electron cyclotron resonance (ECR) chemical vapor deposition system with SiH4, O-2, and CF4 as the reaction gases. The CF4, in contrast to SiF4 or FSi(OC2H5)(3) used in other reports, is an indirect fluorinating source. The fluorinating mechanism is similar to that of the etching of oxide by fluorocarbon plasma, therefore, the thermal stability of the incorporated fluorine must strongly depend on the deposition temperature. It is found that the thermal stability and moisture resistance are greatly improved by increasing the deposition temperature. However, the higher deposition temperature also results in a higher compressed stress and dielectric constant. Besides, to get the moisture resistance, the deposition temperature must be above 300 degrees C. On the other hand, ECR-SiO2 (without fluorination), even deposited at room temperature, is shown to have a good water resistance. Therefore, by choosing deposition temperature for FxSiOy to have enough thermal tolerance and capping with ECR-SiO2, the moisture resistor is suggested for the inter metal dielectric applications.
Quasi-threshold graphs
(1996-08-27)
Yan, JH
;
Chen, JJ
;
Chang, GJ
;
應用數學系
;
Department of Applied Mathematics
Quasi-threshold graphs are defined recursively by the following rules: (1) K-1 is a quasi-threshold graph, (2) adding a new vertex adjacent to all vertices of a quasi-threshold graph results in a quasi-threshold graph, (3) the disjoint union of two quasi-threshold graphs is a quasi-threshold graph. This paper gives some new equivalent definitions of a quasi-threshold graph. From them, linear time recognition algorithms follow. We also give linear time algorithms for the edge domination problem and the bandwidth problem in this class of graphs.
Blends of poly(ethylene terephthalate) with co[poly(ethylene terephthalate-p-oxybenzoate)] .3. Crystallization behavior observed by polarized light microscopy
(1996-08-29)
Ou, CF
;
Lin, CC
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Poly(ethylene terephthalate) (PET) has been melt-mixed at 293 degrees C with two types of co[poly(ethylene terephthalate-p-oxybenzoate)] (POB-PET) copolyester, designated as P28 and P82, at the level of 10 wt %. The different p-acetoxybenzoic acid/PET mole ratios are 20/80 in P28 and 80/20 in P82. The blends were heated to 305 degrees C and then cooled to 25 degrees C at rate of 10 degrees C/min. The crystalline morphology of these blends in the range from 25 degrees C to 305 degrees C is monitored by polarized light microscopy. Morphologic observations revealed a quicker appearance of crystalline in the blends upon the addition of 10 wt % copolyester as a nucleating agent. It is found that P28, which contains fewer POB units, is much more advantageous to the nucleation process than P82, which contains more POB units. According to the optical photomicrographs, sufficient uniformity of distribution of copolyester domains in the PET matrix is reached after 8 min blending. (C) 1996 John Wiley & Sons, Inc.
Blends of poly(ethylene terephthalate) with co[poly(ethylene terephthalate-p-oxybenzoate)] .3. Crystallization behavior observed by polarized light microscopy
(1996-08-29)
Ou, CF
;
Lin, CC
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Poly(ethylene terephthalate) (PET) has been melt-mixed at 293 degrees C with two types of co[poly(ethylene terephthalate-p-oxybenzoate)] (POB-PET) copolyester, designated as P28 and P82, at the level of 10 wt %. The different p-acetoxybenzoic acid/PET mole ratios are 20/80 in P28 and 80/20 in P82. The blends were heated to 305 degrees C and then cooled to 25 degrees C at rate of 10 degrees C/min. The crystalline morphology of these blends in the range from 25 degrees C to 305 degrees C is monitored by polarized light microscopy. Morphologic observations revealed a quicker appearance of crystalline in the blends upon the addition of 10 wt % copolyester as a nucleating agent. It is found that P28, which contains fewer POB units, is much more advantageous to the nucleation process than P82, which contains more POB units. According to the optical photomicrographs, sufficient uniformity of distribution of copolyester domains in the PET matrix is reached after 8 min blending. (C) 1996 John Wiley & Sons, Inc.