Browsing by Issue Date, starting with "2012-09-13"

Now showing 1 - 20 of 35526

STATIC RANDOM ACCESS MEMORY CELL AND METHOD OF OPERATING THE SAME
(2012-09-13)
Chiu Yi-Te
;
Chang Ming-Hung
;
Yang Hao-I
;
Hwang Wei
A static random access memory cell includes a latch unit. The latch unit includes a bi-inverting circuit and a switching circuit. The bi-inverting circuit has a first terminal and a second terminal. The switching circuit is electrically connected between the first terminal and the second terminal, wherein when the switching circuit is turned on, the switching circuit forms a feedback between the first terminal and the second terminal for latching the latch unit; and when the switching circuit is turned off, the feedback is removed to cause the SRAM cell to write a data bit to the latch unit.
THREE-DIMENSIONAL COMPLEMENTARY METAL OXIDE SEMICONDUCTOR DEVICE
(2012-09-13)
Chen Kuan-Neng
;
Chang Yao-Jen
A three-dimensional complementary metal oxide semiconductor device comprises a bottom wafer having a first-type strained MOS transistor; a top wafer stacked on the bottom wafer face to face or face to back, having a second-type strained MOS transistor arranged opposite to the first-type strained MOS transistor, and having a plurality of metal pads and a plurality of TSVs connected to the metal pads; and a hybrid bonding layer arranged between the bottom wafer and the top wafer, having metallic-bonding areas connecting the first-type and second-type MOS transistors to TSVs and a non-metallic bonding area filled in all space except the metallic bonding areas, so as to bond the bottom and top wafers.
METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS
(2012-09-13)
Wu YewChung Sermon
;
Wang Bau-Ming
;
Hsiao Feng-Ching
The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
N-BIT DIGITAL-TO-ANALOG CONVERTING DEVICE
(2012-09-13)
Tseng Wei-Hsin
;
Wu Jieh-Tsorng
An N-bit digital-to-analog converting device includes: a decoder for converting an N-bit binary digital signal into a multi-bit thermometer code during each cycle of a clock signal alternating between first and second states, N being an integer not less than two; a random number generator for generating a reset signal having at least one high logic level bit and at least one low logic level bit that are equal in number and that have a random, time-varying arrangement; and a converting module coupled electrically to the decoder and the random number generator, and configured to convert the thermometer code into an analog voltage corresponding to the digital signal when the clock signal is in the first state, and to reset the analog voltage to a reset value according to the reset signal when the clock signal is in the second state.
柱状ナノ構造体（ナノロッド）を利用し発光ダイオード（ＬＥＤ）の発光効率を引き上げる方法
(2012-09-14)
黄泓文
;
盧廷昌
;
邱清華
;
郭浩中
;
王興宗
The partial solutions consideration based self-adaptive evolutionary algorithm: A learning structure of neuro-fuzzy networks
(2012-09-15)
Hung, Pei-Chia
;
Lin, Sheng-Fuu
;
電控工程研究所
;
Institute of Electrical and Control Engineering
Evolutionary computation has become a popular research field due to its global searching ability. Therefore, it raises a challenge to develop an efficient and robustness evolutionary algorithm to not only reduce the evolution process but also increase the chances to meet the global solution. To this end, this study aims to provide a novel evolutionary algorithm named the partial solutions consideration based self-adaptive evolutionary algorithm (PSC-SEA) to address this issue; the proposed algorithm is applied to adjust the parameters of the neuro-fuzzy networks. More specifically, different from the existing evolution algorithms, the partial solutions consideration (PSC) tends to consider both the specializations and complementary relationships of the partial solutions from the complete solution to prevent converging to suboptimal solution. Moreover, a self-adaptive evolutionary algorithm (SEA) is proposed to dynamically adjust the searching space according to the performance. By doing so, the proposed evolutionary algorithm can consider the influence of partial solutions and provide a suitable searching space to increase the chances to meet the global solution. As shown in the results, the proposed evolutionary algorithm obtains better performance and smoother learning curves than other existing evolutionary algorithms. In other words, the proposed evolutionary algorithm can efficient tune the parameters of the neuro-fuzzy networks to meet the global solution. Base on the results, a framework is proposed to build a benchmark for developing the evolutionary algorithms that can not only consider the influence of partial solutions but also provide a suitable searching space. (C) 2012 Elsevier Ltd. All rights reserved.
Directed assembly of nano-scale phase variants in highly strained BiFeO3 thin films
(2012-09-15)
Zhou, Jian
;
Trassin, Morgan
;
He, Qing
;
Tamura, Nobumichi
;
Kunz, Martin
The delicate balance between elastic energy and electrostatic energy in highly strained BiFeO3 (BFO) thin films results in complex mixed-phase patterns, which poses significant challenges for theoretical understanding and complicates the realization of its full potential in magnetoelectric, electromechanical, and photovoltaic devices. In this letter, we explore in-plane electric field induced phase transition in strain engineered BFO thin films and elucidate the mechanism behind the assembly behavior of complex nano-scale phase domains. Our approach enables deterministic control of phase variants with well-defined structures and orientation, paving the way for designing novel data storage devices based on mixed phase BFO. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752395]
Design, synthesis, photophysical, and electrochemical properties of DCM-based conjugated polymers for light-emitting devices
(2012-09-15)
Vanjinathan, Mahalingam
;
Lin, Hong-Cheu
;
Nasar, A. Sultan
;
材料科學與工程學系
;
Department of Materials Science and Engineering
A series of conjugated hyperbranched polymers, hyperbranched copolymers, and linear polymers containing 2-pyran-4-ylidenemalononitrile (acceptor) and triphenylamine/fluorene (donor) units were synthesized and characterized by FTIR, 1H NMR, thermogravimetric analyses, differential scanning calorimetry, gel permeation chromatography, UVvisible, photoluminescence, and cyclic voltammetry measurements. All the polymers show red-light emission in the range of 566656 nm both in solution and in solid state. The quantum efficiency of the polymers was in the range of 5682%. Among the six polymers synthesized, only polymers containing fluorene units show Tg and polymers based on triphenylamine not exhibit Tg. The band gap of these polymers were found to be reasonably low; hyperbranched copolymer containing fluorene unit shows lowest band gap of 2.18 eV due to the stabilization of LUMO energy level by the electron withdrawing ?CN groups. The thermal and solubility behavior of the polymers were found to be good. All the EL spectra of the devices (indium-tin oxide/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polymer/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline/tris(8-hydroxyquinoline)aluminum)/LiF/Al) show red-light emission, and the device fabricated with P3 and P4 shows maximum luminance and luminous efficiency of 4104 cd m-2 and 0.55 cd angstrom-1 and 3696 cd m-2 and 0.47 cd angstrom-1, respectively, indicates that they had the best carrier balance. (c) 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012
Reallocating multiple inputs and outputs of units to improve overall performance
(2012-09-15)
Liu, Fuh-Hwa Franklin
;
Tsai, Ling-Chuan
;
工業工程與管理學系
;
Department of Industrial Engineering and Management
All decision-making units (DMUs) in the private or public sector are provided with a set of inputs of different values by their governing decision maker (GDM), and are required to generate a set of outputs. The GDM is able to reallocate the inputs/outputs among the DMUs to estimate the maximum absolute decision making efficiency of the sector. Serial models are presented to manage the interaction between two decision-making levels, GDM and DMUs, to provide the reallocated targets of inputs/outputs for DMUs in the next operating period. The 25 branches of a commercial bank in Taiwan are used as an illustration. (c) 2012 Elsevier Inc. All rights reserved.
生化物質感測器及其製造方法
(2012-09-16)
冉曉雯
;
蔡娟娟
;
孟心飛
;
葉雋正
;
戴銘志
本發明係揭露一種生化物質感測器及其製造方法，而生化物質感測器係包含一基板、一閘極、一閘極絕緣層、一主動層、一源/汲極及一生化物質感測層。其中，閘極係設於基板之一面，閘極絕緣層係設於閘極背對基板之一面，主動層係設於閘極絕緣層背對閘極之一面，源/汲極係設於主動層背對閘極絕緣層之一面，而生化物質感測層則設於主動層背對閘極絕緣層之一面，並位於源/汲極之間。
三維互補式金屬氧化物半導體元件
(2012-09-16)
陳冠能
;
張耀仁
本發明提供一種三維互補式金屬氧化物半導體元件,其包含有一底部晶圓,其上形成含有一應力製程的第一型金屬氧化物半導體(MOS);一採面對面或背對面堆疊於底部晶圓上方之頂部晶圓,其上形成一含有應力製程且正對第一型MOS的第二型MOS與數個金屬襯墊,頂部晶圓內形成有數個連接至金屬襯墊的TSV;以及一混合式接合層,其位於底部晶圓與頂部晶圓間且包含有金屬接合區與非金屬接合區,金屬接合區是用以電性連接第一與第二型MOS至TSV,非金屬接合區是填充於金屬接合區外的剩餘空間,以接合底部晶圓與頂部晶圓。
用於次臨界／近臨界動態電壓與頻率調節系統之可程式化時脈產生器
(2012-09-16)
謝忠穎
;
張銘宏
;
黃威
一種可程式化時脈產生器,係適用於次臨界/近臨界之動態電壓與頻率調節系統,其包含:第一脈衝產生單元以及脈衝乘法器。第一計數單元係產生第一計數訊號,以控制相位偵測單元比較第一脈衝訊號與第二脈衝訊號之相位差,控制單元係根據相位差訊號以傳送第一控制訊號,並控制鎖相延遲單元調整第二脈衝訊號之相位,以使第二脈衝訊號與第一脈衝訊號相差一預定相位,藉此,可程式化時脈產生器可補償在低壓狀況下,關於製程、電壓以及溫度之變異,使得可程式化時脈產生器在低壓下仍可產生預期的頻率。
靜態隨機存取記憶體胞元及其操作方法
(2012-09-16)
邱議德
;
張銘宏
;
楊皓義
;
黃威
一種靜態隨機存取記憶體胞元包括一閂鎖單元。該閂鎖單元包括一雙反相電路和一開關電路。該雙反相電路具有一第一端和一第二端。該開關電路電連接在該第一端和該第二端之間,其中當該開關電路接通時,該開關電路在該第一端和該第二端之間形成一回授以閂鎖該閂鎖單元,且當該開關電路關斷時,解除該回授以使該靜態隨機存取記憶體胞元將一資料位元寫到該閂鎖單元。
塗佈裝置、塗佈方法以及控制磁性流體之方法
(2012-09-16)
陳慶耀
;
巫文良
本發明提供一種塗佈裝置、塗佈方法以及控制磁性流體之方法，其是利用一徑向磁場施加於一磁性流體，以驅使磁性流體自徑向磁場之中心往外輻射狀延展，藉以避免旋轉塗佈技術所產生的問題。
Ｎ位元數位至類比轉換裝置
(2012-09-16)
曾偉信
;
吳介琮
一種N位元數位至類比轉換裝置,接收一數位信號和一時鐘信號,時鐘信號在一第一狀態及一第二狀態之間切換,且N位元數位至類比轉換裝置包含:一解碼器,將該數位信號轉換成一具有多位元的溫度計碼;一亂數產生器,輸出一呈亂數的重設信號,重設信號具有多個交互隨機排列且排列方式隨不同時間變化的位元,且其中邏輯高準位的位元之數目等於處於邏輯低準位的位元之數目;及一轉換模組,當時鐘信號處於第一狀態時,轉換模組將該溫度計碼轉換成一相關於數位信號的類比電壓;當時鐘信號處於第二狀態時,轉換模組根據重設信號將類比電壓歸零。
半導體製程方法
(2012-09-16)
吳耀銓
;
王寶明
;
蕭豐慶
本發明提供一種半導體製程方法,包含下列步驟:提供一成長基板;在該成長基板上形成一半導體基板;在該半導體基板與該成長基板之間形成一第一凹凸結構;以及改變該成長基板與該半導體基板的溫度。
Phonon dynamics in CuxBi2Se3 (x=0, 0.1, 0.125) and Bi2Se2 crystals studied using femtosecond spectroscopy
(2012-09-17)
Chen, H. -J.
;
Wu, K. H.
;
Luo, C. W.
;
Uen, T. M.
;
Juang, J. Y.
Phonon dynamics in Bi, Bi2Se2, and CuxBi2Se3 (x=0, 0.1, 0.125) single crystals was investigated using femtosecond pump-probe spectroscopy. Two damped oscillations in measured transient reflectivity changes were observed, respectively, attributed to coherent optical and acoustic phonons. The frequency shift of the phonon modes in Bi-rich Bi2Se2 crystals indicates the intercalation of the additional Bi atoms into the Bi2Se3 matrix and formation of the Bi-2 layer between the quintuple layers (QLs). The deformation of QLs in CuxBi2Se3 crystals was also found. These phonon dynamics results suggest that Cu atoms in CuxBi2Se3 crystals are predominantly intercalated between pair of QLs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754005]
Geometrical impact on the optical polarization of droplet epitaxial quantum dots
(2012-09-17)
Liao, Yu-Huai
;
Liao, Chien-Chih
;
Ku, Chih-Hao
;
Chang, Yu-Chen
;
Cheng, Shun-Jen
We report on experimental and theoretical investigations of the optical anisotropy of GaAs/AlGaAs quantum dots grown by droplet epitaxy. With in situ annealing in the growth, the shape of quantum dots is systematically controlled from a tall and laterally symmetric shape to a flat and laterally elongated one. Photoluminescence spectroscopy demonstrates an uncommon observation: the more elongated the quantum dots, the lower the degree of linear polarization. Theoretical analysis based on a four-band k center dot p theory reveals a substantial impact of vertical confinement on the valence heavy-hole and light-hole mixing, which leads to the enhancement of polarization anisotropy for taller quantum dots. The influence of Coulomb interactions on polarization anisotropy is studied by using the partial configuration interaction method, and is shown to reduce the polarization anisotropy through the mixing of single-particle configurations with different symmetries.
Thermally switchable adhesions of polystyrene-block-poly (n-isopropylacrylamide) copolymer pillar array mimicking climb attitude of geckos
(2012-09-17)
Chen, Jem-Kun
;
Wang, Jing-Hong
;
Chang, Jia-Yaw
;
Fan, Shih-Kang
;
材料科學與工程學系
Inspired by the gecko foot pad, we fabricated polystyrene-block-poly(N-isopropylacrylamide) (PS-b-PNIPAAm) copolymer pillar array to mimic climbing attitude of a gecko, alternately attach to and detach from a surface. The pillar array structure of the PS segment significantly enhances both of the hydrophilic and hydrophobic property of PNIPAAm segment tips at 25 and 50 degrees C, respectively, which could generate alternating adhesive forces of approximately 120 and 11 nN. The dramatic change in adhesive and friction force difference at 25 and 50 degrees C may guide the design of bio-inspired artificial analogues, which could approach gecko's climbing behavior. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754135]
In vivo formation of N7- guanine DNA adduct by safrole 2 ',3 '-oxide in mice
(2012-09-18)
Shen, Li-Ching
;
Chiang, Su-Yin
;
Lin, Ming-Huan
;
Chung, Wen-Sheng
;
Wu, Kuen-Yuh
Safrole, a naturally occurring product derived from spices and herbs, has been shown to be associated with the development of hepatocellular carcinoma in rodents. Safrole 2',3'-oxide (SFO), an electrophilic metabolite of safrole, was shown to react with DNA bases to form detectable DNA adducts in vitro, but not detected in vivo. Therefore, the objective of this study was to investigate the formation of N7-(3-benzo[1,3] dioxol-5-yl-2-hydroxypropyl) guanine ( N7 gamma-SFO-Gua) resulting from the reaction of SFO with the most nucleophilic site of guanine in vitro and in vivo with a newly developed isotope-dilution high performance liquid chromatography electrospray ionization tandem mass spectrometry (HPLC-ESI-MS/MS) method. N7 gamma-SFO-Gua and [N-15(5)]-N7-(3-benzo[1,3] dioxol-5-yl-2-hydroxypropyl) guanine ([N-15(5)]-N7 gamma-SFO-Gua) were first synthesized, purified, and characterized. The HPLC-ESI-MS/MS method was developed to measure N7 gamma-SFO-Gua in calf thymus DNA treated with 60 mu mol of SFO for 72 h and in urine samples of mice treated with a single dose of SFO (30 mg/kg body weight, intraperitoneally). In calf thymus DNA, the level of N7 gamma-SFO-Gua was 2670 adducts per 106 nucleotides. In urine of SFO-treated mice, the levels of N7 gamma- SFO-Gua were 1.02 +/- 0.14 ng/mg creatinine (n = 4) on day 1, 0.73 +/- 0.68 ng/mg creatinine (n = 4) on day 2, and below the limit of quantitation on day 3. These results suggest that SFO can cause in vivo formation of N7 gamma-SFO-Gua, which may then be rapidly depurinated from the DNA backbone and excreted through urine. (c) 2012 Elsevier Ireland Ltd. All rights reserved.