Browsing by Issue Date, starting with "2012-11-26"

Now showing 1 - 20 of 34908

Ohmic contact on n-type Ge using Yb-germanide
(2012-11-26)
Zheng, Zhi-Wei
;
Ku, Teng-Chieh
;
Liu, Ming
;
Chin, Albert
;
電子工程學系及電子研究所
Poor ohmic contact by Fermi-level pinning to valence band (EV) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 degrees C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768700]
Low-temperature grown graphene films by using molecular beam epitaxy
(2012-11-26)
Lin, Meng-Yu
;
Guo, Wei-Ching
;
Wu, Meng-Hsun
;
Wang, Pro-Yao
;
Liu, Te-Huan
Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 degrees C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768948]
The suppressed negative bias illumination-induced instability in In-Ga-Zn-O thin film transistors with fringe field structure
(2012-11-26)
Chen, Yu-Chun
;
Chang, Ting-Chang
;
Li, Hung-Wei
;
Hsieh, Tien-Yu
;
Chen, Te-Chih
This study investigates the suppressed negative gate bias illumination stress (NBIS) -induced instability of via-type amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) with fringe field (FF) structures. The less negative threshold voltage shifts of devices after NBIS are showed when device has larger FF structures. This finding is attributed to more dispersive distribution of photo-generated holes in the width direction of a-IGZO during NBIS, which reduce the hole trapping phenomenon in the front channel interface. The a-IGZO TFT with FF structure is expected to be an effective method to increase the electrical reliability of devices after NBIS. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767996]
The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
(2012-11-26)
Hsieh, E. R.
;
Chung, Steve S.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
An effect, called random trap fluctuation (RTF), is proposed to study the threshold voltage (V-th) fluctuation of metal oxide semiconductor field effect transistors (MOSFETs) under Fowler-Nordeim (FN) or hot carrier (HC) stress condition. Experiments have been demonstrated on n-channel MOSFETs, and it was found that not only the random dopant fluctuation (RDF) but also the stress-induced traps vary the V-th fluctuation. More importantly, the stress-induced trap barrier determines the V-th fluctuation. For devices after FN stress, V-th fluctuation is enhanced since the trap barrier regulates the transporting carriers. For devices after HC stress, V-th fluctuation is supressed since the carriers are backscattered into the channel by the trap barrier and fewer carriers with higher energy pass through the barrier. These results provide us a clear understanding on another source of V-th fluctuations in addition to the RDF as devices are further scaled. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768687]
Static random access memory with data controlled power supply
(2012-11-27)
Chuang Ching-Te
;
Yang Hao-I
;
Hsia Mao-Chih
;
Lin Yung-Wei
;
Lu Chien-Yu
A static random access memory with data controlled power supply, which comprises a memory cell circuit and at least one Write-assist circuit, for providing power to the memory cell circuit according to data to be written to the memory cell circuit.
五四時期的青春之歌：郁達夫《沉淪》與丁玲《莎菲女士的日記》
(2012-11-28)
蘇敏逸
;
開放教育推動中心
;
Open Education Office
課程首頁本課程是由交通大學新文藝復興閱讀計畫提供。 96 年 8 月當各大學紛紛摩拳擦掌準備迎接新生的同時，交通大學校長吳重雨則因為一則來自於七月份泰晤士報，有關於英國首相布朗公布其夏日讀書清單的新聞中，看到了他對知識的尊重。在這同時，吳重雨校長也思考著，要如何為學生準備追求知識的環境和激發他們對知識的尊重與喜愛。台積電張忠謀董事長曾陳述他 18 歲進入哈佛那一年，博覽文史哲理工經典群籍，至此奠定了他求知的基礎，並借海明威名言，將其改為「哈佛這一年為人生可帶走的盛宴。」吳重雨校長以張董事長的學習為借鏡，認為學生固然能藉由自我閱讀的方式學習到豐沛的知識，但透過名人、大師親臨現場地介紹經典書籍，更能加深學子們對於書籍的認識與興趣，這也是「新文藝復興閱讀計劃」 ( 以下簡稱 : 「經典名著選讀」 ) 活動展開籌劃的緣由。於是，吳重雨校長便積極敦請「交大通識教育委員會」，接手籌備本計劃的相關活動，而該中心也成為實際施行本計畫的策動、開課以及認證單位。至此，期許交大學子藉由閱讀、聽講來提昇人文素養、開拓視野的「新文藝復興閱讀計劃」，就此展開。
Automatic Age Estimation System for Face Images Regular Paper
(2012-11-28)
Lin, Chin-Teng
;
Li, Dong-Lin
;
Lai, Jian-Hao
;
Han, Ming-Feng
;
Chang, Jyh-Yeong
Humans are the most important tracking objects in surveillance systems. However, human tracking is not enough to provide the required information for personalized recognition. In this paper, we present a novel and reliable framework for automatic age estimation based on computer vision. It exploits global face features based on the combination of Gabor wavelets and orthogonal locality preserving projections. In addition, the proposed system can extract face aging features automatically in real-time. This means that the proposed system has more potential in applications compared to other semi-automatic systems. The results obtained from this novel approach could provide clearer insight for operators in the field of age estimation to develop real-world applications.
MULTILAYER SUBSTRATE HAVING GALLIUM NITRIDE LAYER AND METHOD FOR FORMING THE SAME
(2012-11-29)
Chang Edward Yi
;
Hsiao Yu-Lin
;
Lu Jung-Chi
The present invention provides a method for forming a multilayer substrate having a gallium nitride layer, wherein a mesh layer having a plurality of openings is formed on a substrate, and a buffer layer, three aluminum gallium nitride layers with different aluminum concentrations and a gallium nitride layer are formed in sequence on the substrate in the openings. The three aluminum gallium nitride layers with different aluminum concentrations are capable of releasing stress, decreasing cracks on the surface of the gallium nitride layer and controlling interior defects, such that the present invention provides a gallium nitride layer with larger area, greater thickness, no cracks and high quality for facilitating the formation of high performance electronic components in comparison with the prior art. The present invention further provides a multilayer substrate having a gallium nitride layer.
High-Gain Complementary Inverter with Ambipolar Thin Film Transistors and Fabrication Thereof
(2012-11-29)
Liu Po-Tsun
;
Chou Yi-Teh
;
Teng Li-Feng
;
Fu Chur-Shyang
;
Shieh Han-Ping
The present invention relates to a high gain complementary inverter with ambipolar thin film transistors and fabrication thereof, comprising: a gate layer, a silica layer, a first active layer, a first source, a first drain, a second active layer, a second source and a second drain for fabrication cost and complexity reduction.
MODEL-BASED CHANNEL ESTIMATOR FOR CORRELATED FADING CHANNELS AND CHANNEL ESTIMATION METHOD THEREOF
(2012-11-29)
Chen Yen-Chih
;
Cheng Chien-Chun
;
Su Yu-Ted
A model-based channel estimator for correlated fading channels adapted to a multiple-input multiple-output (MIMO) system, estimates a coefficient vector of a channel matrix for a given angle of departure (AoD) according to a plurality of received signals, a plurality of transmit pilots, a plurality of known model orders, and a plurality of predetermined bases for exploiting time, frequency, spatial channel correlation among a transmit antenna array, and spatial channel correlation among a receive antenna array, then estimates a mean AoD based on the estimated channel matrix. The channel estimator estimates iteratively the coefficient vector and the mean AoD until a stop criterion is met. Then, it reconstructs a channel estimate by using the plurality of predetermined bases, the coefficient vector, and the mean AoD.
MICROFLUIDIC SYSTEM AND METHOD FOR CREATING AN ENCAPSULATED DROPLET WITH A REMOVABLE SHELL
(2012-11-29)
FAN SHIH-KANG
;
HSU YAO-WEN
;
CHEN CHIUN-HSUN
A microfluidic system for creating encapsulated droplets whose shells can be further removed comprises: two electrode plates and a spacing structure disposed between the two electrode plates. One of the electrode plates has three reservoir electrodes and a plurality of channel electrodes. The three electrodes are respectively used for accommodating a shell liquid, a core liquid, and a removing liquid which is able to remove the shell liquid. The channel electrodes are used for communicating droplets among the three reservoir electrodes. Via these arrangements, the microfluidic system can create a quantitative shell droplet and a quantitative core droplet, and then merge the shell and core droplets to form an encapsulated droplet. Moreover, the shell of the encapsulated droplet can be removed by mixing it with the removing liquid. This invention is further provided with a method for creating an encapsulated droplet with a removable shell.
Facile Synthesis of Radial-Like Macroporous Superparamagnetic Chitosan Spheres with In-Situ Co-Precipitation and Gelation of Ferro-Gels
(2012-11-30)
Yang, Chih-Hui
;
Wang, Chih-Yu
;
Huang, Keng-Shiang
;
Yeh, Chen-Sheng
;
Wang, Andrew H. -J.
Macroporous chitosan spheres encapsulating superparamagnetic iron oxide nanoparticles were synthesized by a facile and effective one-step fabrication process. Ferro-gels containing ferrous cations, ferric cations and chitosan were dropped into a sodium hydroxide solution through a syringe pump. In addition, a sodium hydroxide solution was employed for both gelation (chitosan) and co-precipitation (ferrous cations and ferric cations) of the ferro-gels. The results showed that the in-situ co-precipitation of ferro-ions gave rise to a radial morphology with non-spheroid macro pores (large cavities) inside the chitosan spheres. The particle size of iron oxide can be adjusted from 2.5 nm to 5.4 nm by tuning the concentration of the sodium hydroxide solution. Using Fourier Transform Infrared Spectroscopy and X-ray diffraction spectra, the synthesized nanoparticles were illustrated as Fe3O4 nanoparticles. In addition, the prepared macroporous chitosan spheres presented a super-paramagnetic behaviour at room temperature with a saturation magnetization value as high as ca. 18 emu/g. The cytotoxicity was estimated using cell viability by incubating doses (0 similar to 1000 mu g/mL) of the macroporous chitosan spheres. The result showed good viability (above 80%) with alginate chitosan particles below 1000 mu g/mL, indicating that macroporous chitosan spheres were potentially useful for biomedical applications in the future.
k-Angle Object Coverage Problem in a Wireless Sensor Network
(2012-12-01)
Tseng, Yu-Chee
;
Chen, Po-Yu
;
Chen, Wen-Tsuen
;
資訊工程學系
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Department of Computer Science
One of the fundamental issues in sensor networks is the coverage problem, which reflects how well a field is monitored or tracked by sensors. Various versions of this problem have been studied, such as object, area, barrier, and hole coverage problems. In this paper, we define a new k-angle object coverage problem in a wireless sensor network. Each sensor can only cover a limited angle and range, but can freely rotate to any direction to cover a particular angle. Given a set of sensors and a set of objects at known locations, the goal is to use the least number of sensors to k-angle-cover the largest number of objects such that each object is monitored by at least k sensors satisfying some angle constraint. We propose centralized and distributed polynomial-time algorithms to solve this problem. Simulation results show that our algorithms can be effective in maximizing coverage of objects. A prototype system is developed to demonstrate the usefulness of angle coverage.
Item Selection for the Development of Parallel Forms From an IRT-Based Seed Test Using a Sampling and Classification Approach
(2012-12-01)
Chen, Pei-Hua
;
Chang, Hua-Hua
;
Wu, Haiyan
;
應用化學系
;
管理科學系
Two sampling-and-classification-based procedures were developed for automated test assembly: the Cell Only and the Cell and Cube methods. A simulation study based on a 540-item bank was conducted to compare the performance of the procedures with the performance of a mixed-integer programming (MIP) method for assembling multiple parallel test forms. The study investigated the statistical equivalence of the forms generated by the three test assembly methods (Cell Only, Cell and Cube, and MIP) in terms of test information functions, test characteristic curves, mean square deviations, and practical constraints, such as content balancing and nonoverlap among forms. The results indicated that the 13-point MIP method outperformed the other two methods in terms of the "closeness" test information functions between the reference form and the assembled parallel tests. Regarding test characteristic curves, the Cell Only and Cell and Cube methods yielded more similar test characteristic curves than the MIP method. Constraining test information functions apparently does not guarantee that the assembled forms will yield similar test characteristic curves. Overall, the Cell Only and Cell and Cube methods have the potential to provide results similar to the optimization approach.
毛語言及其批判之可能
(深河出版有限公司, 2012-12-01)
黃子平
變動中的集體聽覺：模糊的訊號
(深河出版有限公司, 2012-12-01)
王明輝
Enhanced carrier extraction efficiency in organic solar cells with reduced space-charge limited transport by engineered vertical compositional profile
(2012-12-01)
Lee, Ming-Kun
;
Kuo, Tsung-Han
;
Kong, Kuo-Wen
;
Hong, Yun-Ru
;
Wang, Jen-Chun
A multi-layered polymer solar cell (PSC) with a graded compositional profile to reduce space-charge limited (SCL) transport was designed and analyzed in details. We found that by increasing the effective carrier lifetime for the slower photo-carriers. SCL effects that degrade the fill factor and the power conversion efficiency can be alleviated in PSCs with a thick active layer. The reduction of SCL effects was evidenced by a diminished dependence of the incident photon-to-electron conversion efficiency (IPCE) on light bias, which also indicates the importance of light bias in characterizing the operating IPCE of PSCs with thick active layers which operate in SCL region. Based on our results, device architecture to enhance FF was proposed. (C) 2012 Elsevier B.V. All rights reserved.
頂尖男子桌球選手比賽技術比較分析
(國立交通大學體育室, 2012-12-01)
郭山本
;
陳金海
;
游鳳芸
;
郭明珍
;
Shan-Ben Kuo
目的：分析頂尖男子桌球選手綜合技術表現並比較我國與世界頂尖男子桌球選手綜合技術表現差異。方法：採用觀察法蒐集2008年參加世界盃桌球賽的各國頂尖選手11場比賽22筆資料，以桌球比賽綜合技術統計表為研究工具，所得資料以敘述統計、t檢定等方法來進行分析。結果：一、頂尖男子桌球選手各項綜合技術得分率及使用率最多的都是正手側發球搶攻。二、我國與世界頂尖男子桌球選手各項綜合技術得分率與使用率差異比較，只有蔣澎龍在正手側推攻使用率與世界頂尖男子桌球選手達顯著差異，其他各項綜合技術都未達顯著差異。結論：頂尖男子桌球選手比賽最重要綜合技術為正手側發球搶攻。
一個台灣人的紅衛兵印象
(深河出版有限公司, 2012-12-01)
鄭鴻生
阿妹／台妹：關於流行音樂研究的一點想法
(深河出版有限公司, 2012-12-01)
蔡孟哲