Low-temperature grown graphene films by using molecular beam epitaxy

Abstract

Complete graphene film is prepared by depositing carbon atoms directly on Cu foils in a molecular beam epitaxy chamber at 300 degrees C. The Raman spectrum of the film has indicated that high-quality few-layer graphene is obtained. With back-gated transistor architecture, the characteristic current modulation of graphene transistors is observed. Following the similar growth procedure, graphitization is observed at room temperature, which is consistent with the molecular dynamics simulations of graphene growth. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768948]