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Showing results 61 to 67 of 67 < previous 
Issue DateTitleAuthor(s)
2007Temperature dependence of the excess noise of a GaN nanowire deviceLi, L. C.; Huang, S. Y.; Wei, J. A.; Suen, Y. W.; Lee, M. W.; Hsieh, W. H.; Liu, T. W.; Chen, C. C.; 奈米科技中心; Center for Nanoscience and Technology
2007Thermal leakage improvement by using a high-work-function ni electrode in high-kappa TiHfO metal-insulator-metal capacitorsChiang, K. C.; Huang, C. C.; Pan, H. C.; Hsiao, C. N.; Lin, J. W.; Hsieh, I. J.; Cheng, C. H.; Chou, C. P.; Chin, A.; Hwang, H. L.; McAlister, S. P.; 機械工程學系; 奈米科技中心; Department of Mechanical Engineering; Center for Nanoscience and Technology
1-Feb-2005Three-dimensional metal gate-high-kappa-GOI CMOSFETs on 1-poly-6-metal 0.18-mu m Si devicesYu, DS; Chin, A; Liao, CC; Lee, CF; Cheng, CF; Li, MF; Yoo, WJ; McAlister, SP; 奈米科技中心; Center for Nanoscience and Technology
17-Apr-2006Ultrafast carrier capture and relaxation in modulation-doped InAs quantum dotsSun, KW; Kechiantz, A; Lee, BC; Lee, CP; 應用化學系; 應用化學系分子科學碩博班; 電子工程學系及電子研究所; 奈米科技中心; Department of Applied Chemistry; Institute of Molecular science; Department of Electronics Engineering and Institute of Electronics; Center for Nanoscience and Technology
28-Jun-2005Using a solution crystal growth method to grow arrays of aligned, individually distinct, single-crystalline TiO2 nanoneedles within nanocavitiesWeng, CC; Chen, CP; Ting, CH; Wei, KH; 材料科學與工程學系; 奈米科技中心; Department of Materials Science and Engineering; Center for Nanoscience and Technology
1-Oct-2005Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectricChiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1-Nov-2005Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transferKao, HL; Hung, BF; Chin, A; Lai, JM; Lee, CF; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
Showing results 61 to 67 of 67 < previous