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Showing results 3 to 7 of 7 < previous 
Issue DateTitleAuthor(s)
1-Feb-2007Effect of oxygen concentration on characteristics of NiOx-based resistance random access memoryLee, Ming-Daou; Ho, Chia-Hua; Lo, Chi-Kuen; Peng, Tai-Yen; Yao, Yeong-Der; 材料科學與工程學系; Department of Materials Science and Engineering
1-Oct-2012Effects of Bonding Technology and Thinning Process in Three-Dimensional Integration on Device CharacteristicsLu, Cheng-Hsien; Cheng, Chuan-An; Ho, Chia-Hua; Chen, Kuan-Neng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Oct-2016Enhanced Properties in Conductive-Bridge Resistive Switching Memory With Oxide-Nitride Bilayer StructureTsai, Tsung-Ling; Jiang, Fa-Shen; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
14-May-2015Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structureChand, Umesh; Huang, Kuan-Chang; Huang, Chun-Yang; Ho, Chia-Hua; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2012Random Telegraph Noise in 1X-nm CMOS Silicide Contacts and a Method to Extract Trap DensityChen, Min-Cheng; Lin, Chia-Yi; Chen, Bo-Yuan; Lin, Chang-Hsien; Huang, Guo-Wei; Ho, Chia-Hua; Wang, Tahui; Hu, Chenming; Yang, Fu-Liang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 3 to 7 of 7 < previous