標題: | Effect of oxygen concentration on characteristics of NiOx-based resistance random access memory |
作者: | Lee, Ming-Daou Ho, Chia-Hua Lo, Chi-Kuen Peng, Tai-Yen Yao, Yeong-Der 材料科學與工程學系 Department of Materials Science and Engineering |
關鍵字: | NiO;resistance random access memory (RRAM);Schottky emission |
公開日期: | 1-二月-2007 |
摘要: | The resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory. |
URI: | http://dx.doi.org/10.1109/TMAG.2006.888525 http://hdl.handle.net/11536/5235 |
ISSN: | 0018-9464 |
DOI: | 10.1109/TMAG.2006.888525 |
期刊: | IEEE TRANSACTIONS ON MAGNETICS |
Volume: | 43 |
Issue: | 2 |
起始頁: | 939 |
結束頁: | 942 |
顯示於類別: | 會議論文 |