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dc.contributor.authorLee, Ming-Daouen_US
dc.contributor.authorHo, Chia-Huaen_US
dc.contributor.authorLo, Chi-Kuenen_US
dc.contributor.authorPeng, Tai-Yenen_US
dc.contributor.authorYao, Yeong-Deren_US
dc.date.accessioned2014-12-08T15:06:41Z-
dc.date.available2014-12-08T15:06:41Z-
dc.date.issued2007-02-01en_US
dc.identifier.issn0018-9464en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TMAG.2006.888525en_US
dc.identifier.urihttp://hdl.handle.net/11536/5235-
dc.description.abstractThe resistance bistability and the switching effect has been systematically studied in nickel oxide films with variable oxygen concentrations. Both the switching bias voltage and the resistance ratio of RESET to SET were found to be strongly concentration dependent. Meanwhile, the electrical characteristics can be exactly examined by an Schottky emission. By means of mathematical fitting, the resistance bistability seems to be related to the alternating of dielectric constant and the barrier height. Furthermore, the room temperature cycle endurance with a distinguishable operation window was found to exceed 800. This indicates that the nickel oxide has the potential to be a promising material on resistance random access memory.en_US
dc.language.isoen_USen_US
dc.subjectNiOen_US
dc.subjectresistance random access memory (RRAM)en_US
dc.subjectSchottky emissionen_US
dc.titleEffect of oxygen concentration on characteristics of NiOx-based resistance random access memoryen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TMAG.2006.888525en_US
dc.identifier.journalIEEE TRANSACTIONS ON MAGNETICSen_US
dc.citation.volume43en_US
dc.citation.issue2en_US
dc.citation.spage939en_US
dc.citation.epage942en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000244011300082-
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