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Showing results 3 to 14 of 14 < previous 
Issue DateTitleAuthor(s)
1-May-1999Electrical characterization of Al2O3 on Si from thermally oxidized AlAs and AlLiao, CC; Chin, A; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 物理研究所; 電子工程學系及電子研究所; Institute of Physics; Department of Electronics Engineering and Institute of Electronics
1-May-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1999Improved electrical characteristics of CoSi2 using HF-vapor pretreatmentWu, YH; Chen, WJ; Chang, SL; Chin, A; Gwo, S; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-1997In0.52Al0.48As/InAs/InxAl1-xAs pseudomorphic HEMT's on InPChin, A; Liao, CC; Tsai, C; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1999The leakage current effect of thin gate oxides (2.4-2.7 nm) with in situ native oxide desorptionLai, JM; Chieng, WH; Lin, BC; Chin, A; Tsai, C; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1998Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interfaceCheng, YC; Chen, WJ; Lin, BC; Tsai, C; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Thin oxides with in situ native oxide removalChin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Thin oxides with in situ native oxide removalChin, A; Chen, WJ; Chang, T; Kao, RH; Lin, BC; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995Ultra-thin oxide with atomically smooth interfacesChin, A; Chen, WJ; Kao, RH; Lin, BC; Chang, T; Tsai, C; Huang, JCM; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
1-May-1997Ultrathin N2O-oxide with atomically flat interfacesChin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-1997Ultrathin N2O-oxide with atomically flat interfacesChin, A; Chen, WJ; Lin, BC; Kao, JH; Tsai, C; Huang, JCM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 3 to 14 of 14 < previous